Datasheet > STD11N60DM2

STD11N60DM2

更新时间： 2023-12-20 18:44:28

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
17页	500K
描述
N沟道600 V、0.370 Ohm典型值、10 A MDmesh DM2功率MOSFET，DPAK封装

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STD11N60DM2 数据手册

STD11N60DM2

Datasheet

N-channel 600 V, 370 mΩ typ., 10 A MDmesh DM2 Power MOSFET in a DPAK

package

Features

TAB

@ T

R max.

DS(on)

TOT

Order code

Jmax

STD11N60DM2

650 V

420 mΩ

10 A

110 W

•

Fast-recovery body diode

DPAK

Extremely low gate charge and input capacitance

Low on-resistance

D(2, TAB)

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

G(1)

Applications

S(3)

NG1D2TS3Z

•

Switching applications

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-

recovery diode series. It offers very low recovery charge (Q_rr) and time (t_rr) combined

with low R_DS(on), rendering it suitable for the most demanding high-efficiency

converters and ideal for bridge topologies and ZVS phase-shift converters.

Product status

STD11N60DM2

Product summary

Order code

STD11N60DM2

11N60DM2

DPAK

Marking

Package

Packing

Tape and reel

DS11674 - Rev 3 - May 2023

www.st.com

For further information contact your local STMicroelectronics sales office.

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