5秒后页面跳转
STD11NM50N PDF预览

STD11NM50N

更新时间: 2024-01-23 14:08:57
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
16页 663K
描述
N-channel 500 V, 0.4 Ω, 8.5 A MDmesh™ II Power MOSFET in DPAK, TO-220FP and TO-220

STD11NM50N 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-252包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:16 weeks
风险等级:1.71Is Samacsys:N
雪崩能效等级(Eas):150 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (Abs) (ID):9 A
最大漏极电流 (ID):9 A最大漏源导通电阻:0.47 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):70 W最大脉冲漏极电流 (IDM):36 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STD11NM50N 数据手册

 浏览型号STD11NM50N的Datasheet PDF文件第2页浏览型号STD11NM50N的Datasheet PDF文件第3页浏览型号STD11NM50N的Datasheet PDF文件第4页浏览型号STD11NM50N的Datasheet PDF文件第5页浏览型号STD11NM50N的Datasheet PDF文件第6页浏览型号STD11NM50N的Datasheet PDF文件第7页 
STD11NM50N  
STF11NM50N, STP11NM50N  
N-channel 500 V, 0.4 Ω, 8.5 A MDmesh™ II Power MOSFET  
in DPAK, TO-220FP and TO-220  
Features  
RDS(on)  
max  
Order codes  
VDSS @TJmax  
ID  
3
1
3
STD11NM50N  
STF11NM50N  
STP11NM50N  
2
DPAK  
1
550 V  
< 0.47 Ω 8.5 A  
TO-220  
100% avalanche tested  
3
2
Low input capacitance and gate charge  
Low gate input resistance  
1
TO-220FP  
Application  
Switching applications  
Figure 1.  
Internal schematic diagram  
Description  
These devices are made using the second  
generation of MDmesh™ technology. This  
revolutionary Power MOSFET associates a new  
vertical structure to the company’s strip layout to  
yield one of the world’s lowest on-resistance and  
gate charge. It is therefore suitable for the most  
demanding high efficiency converters.  
$ꢅꢆꢇ  
'ꢅꢁꢇ  
3ꢅꢈꢇ  
!-ꢀꢁꢂꢃꢄVꢁ  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STD11NM50N  
STF11NM50N  
STP11NM50N  
11NM50N  
11NM50N  
11NM50N  
DPAK  
TO-220FP  
TO-220  
Tape and reel  
Tube  
Tube  
November 2010  
Doc ID 17156 Rev 3  
1/16  
www.st.com  
16  

STD11NM50N 替代型号

型号 品牌 替代类型 描述 数据表
STD11NM50N STMICROELECTRONICS

当前型号

N-channel 500 V, 0.4 Ω, 8.5 A MDmesh™ II P
STD18N55M5 STMICROELECTRONICS

类似代替

N-channel 550 V, 0.18 Ω, 13 A, MDmesh™ V P
STD86N3LH5 STMICROELECTRONICS

类似代替

N-channel 30 V, 0.0045 Ohm , 80 A, DPAK STripFET V Power MOSFET
STD15NF10T4 STMICROELECTRONICS

类似代替

N-channel 100V - 0.060ohm- 23A - DPAK Low gate charge STripFET II Power MOSFET

与STD11NM50N相关器件

型号 品牌 描述 获取价格 数据表
STD11NM60N STMICROELECTRONICS N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFE

获取价格

STD11NM60N-1 STMICROELECTRONICS N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFE

获取价格

STD11NM60N-1_08 STMICROELECTRONICS N-channel 600 V - 0.37 ヘ - 10 A - TO-220 - TO

获取价格

STD11NM60ND STMICROELECTRONICS N-channel 600 V, 0.37 Ω, 10 A, FDmesh™ II Pow

获取价格

STD11NM60ND_10 STMICROELECTRONICS N-channel 600 V, 0.37 Ω, 10 A, FDmesh™ II Pow

获取价格

STD11NM65N STMICROELECTRONICS N-channel 650 V, 0.425 Ω typ., 11 A MDmeshâ„

获取价格

STD120 LITTELFUSE This axial leaded strap product is designed to provide reliable, non-cycling protection fo

获取价格

STD-1201 VOLGEN ADAPTER - 5W/10W

获取价格

STD-12012T VOLGEN ADAPTER-18W

获取价格

STD-12016T VOLGEN ADAPTER-18W

获取价格