5秒后页面跳转
STD116GKXXB PDF预览

STD116GKXXB

更新时间: 2024-11-03 01:01:59
品牌 Logo 应用领域
SIRECTIFIER /
页数 文件大小 规格书
4页 473K
描述
Thyristor-Diode Modules

STD116GKXXB 数据手册

 浏览型号STD116GKXXB的Datasheet PDF文件第2页浏览型号STD116GKXXB的Datasheet PDF文件第3页浏览型号STD116GKXXB的Datasheet PDF文件第4页 
STD116GKXXB  
Thyristor-Diode Modules  
Dimensions in mm (1mm=0.0394")  
Type  
VRSM  
VDSM  
V
VRRM  
VDRM  
V
STD116GK08B  
STD116GK12B  
STD116GK14B  
STD116GK16B  
STD116GK18B  
900  
800  
1300  
1500  
1700  
1900  
1200  
1400  
1600  
1800  
Symbol  
Test Conditions  
Maximum Ratings  
Unit  
I
I
TRMS, IFRMS TVJ=TVJM  
180  
116  
A
TAVM, IFAVM TC=85oC; 180o sine  
TVJ=45oC  
VR=0  
TVJ=TVJM  
VR=0  
t=10ms (50Hz), sine  
t=8.3ms (60Hz), sine  
t=10ms(50Hz), sine  
t=8.3ms(60Hz), sine  
2250  
2400  
2000  
2150  
ITSM, IFSM  
A
TVJ=45oC  
t=10ms (50Hz), sine  
t=8.3ms (60Hz), sine  
t=10ms(50Hz), sine  
t=8.3ms(60Hz), sine  
25300  
23900  
20000  
19100  
VR=0  
i2dt  
A2s  
TVJ=TVJM  
VR=0  
150  
TVJ=TVJM  
f=50Hz, tp=200us  
(di/dt)cr VD=2/3VDRM  
IG=0.45A  
repetitive, IT=250A  
A/us  
500  
non repetitive, IT=ITAVM  
VDR=2/3VDRM  
diG/dt=0.45A/us  
TVJ=TVJM;  
RGK= ; method 1 (linear voltage rise)  
1000  
V/us  
W
(dv/dt)cr  
TVJ=TVJM  
IT=ITAVM  
tp=30us  
tp=300us  
10  
5
PGM  
0.5  
10  
W
V
PGAV  
VRGM  
-40...+125  
125  
-40...+125  
TVJ  
TVJM  
Tstg  
oC  
50/60Hz, RMS  
IISOL<1mA  
t=1min  
t=1s  
3000  
3600  
VISOL  
V~  
_
Mounting torque (M5)  
Terminal connection torque (M5)  
2.5-4.0/22-35  
2.5-4.0/22-35  
Nm/lb.in.  
g
Md  
Weight  
110  
Typical  
P1  
www.sirectifier.com  
©2008 SIRECTIFIER All rights reserved,  
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com  

与STD116GKXXB相关器件

型号 品牌 获取价格 描述 数据表
STD11N50M2 STMICROELECTRONICS

获取价格

N沟道500 V、0.45 Ohm典型值、8 A MDmesh M2功率MOSFET,DP
STD11N60DM2 STMICROELECTRONICS

获取价格

N沟道600 V、0.370 Ohm典型值、10 A MDmesh DM2功率MOSFET
STD11N60M6 STMICROELECTRONICS

获取价格

N-channel 600 V, 500 mOhm typ., 8 A MDmesh M6 Power MOSFET in a DPAK package
STD11N65M2 STMICROELECTRONICS

获取价格

N沟道650 V、0.60 Ohm典型值、7 A MDmesh M2功率MOSFET,DP
STD11N65M5 STMICROELECTRONICS

获取价格

N沟道650 V、0.43 Ohm典型值、9 A MDmesh M5功率MOSFET,DP
STD11NM50N STMICROELECTRONICS

获取价格

N-channel 500 V, 0.4 Ω, 8.5 A MDmesh™ II P
STD11NM60N STMICROELECTRONICS

获取价格

N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFE
STD11NM60N-1 STMICROELECTRONICS

获取价格

N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFE
STD11NM60N-1_08 STMICROELECTRONICS

获取价格

N-channel 600 V - 0.37 ヘ - 10 A - TO-220 - TO
STD11NM60ND STMICROELECTRONICS

获取价格

N-channel 600 V, 0.37 Ω, 10 A, FDmesh™ II Pow