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STC5DNF30V PDF预览

STC5DNF30V

更新时间: 2024-11-19 04:00:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲光电二极管驱动
页数 文件大小 规格书
12页 255K
描述
Dual N-channel 30V - 0.032з - 4.5A - TSSOP8 2.7V-Driver STripFET⑩ Power MOSFET

STC5DNF30V 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TSSOP包装说明:TSSOP-8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.8
Is Samacsys:N配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):4.5 A
最大漏极电流 (ID):4.5 A最大漏源导通电阻:0.04 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e4湿度敏感等级:1
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1.3 W
最大脉冲漏极电流 (IDM):18 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:NICKEL PALLADIUM GOLD端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STC5DNF30V 数据手册

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STC5DNF30V  
Dual N-channel 30V - 0.032- 4.5A - TSSOP8  
2.7V-Driver STripFET™ Power MOSFET  
General features  
Type  
V
R
I
D
DSS  
DS(on)  
< 0.035(@4.5V)  
< 0.040(@2.7V)  
STC5DNF30V  
30V  
4.5A  
Standard outline for easy automated surface  
mount assembly  
TSSOP8  
Ultra low threshold gate drive (2.7V)  
Description  
This Power MOSFET is the latest development of  
STMicroelectronics unique “Single Feature  
Size™” strip-based process. The resulting  
transistor shows extremely high packing density  
for low on-resistance, rugged avalanche  
characteristics and less critical alignment steps  
therefore a remarkable manufacturing  
Internal schematic diagram  
reproducibility. No electrical connections are  
shared between mosfets.  
Applications  
Switching application  
Order codes  
Part number  
Marking  
Package  
Packaging  
STC5DNF30V  
C5DNF30V  
TSSOP8  
Tape & reel  
April 2006  
Rev 1  
1/12  
www.st.com  
12  

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