5秒后页面跳转
STC5NF30V PDF预览

STC5NF30V

更新时间: 2024-11-07 21:55:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
8页 274K
描述
N-CHANNEL 30V - 0.027 OHM - 5A TSSOP8 2.7V-DRIVE STripFET II POWER MOSFET

STC5NF30V 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TSSOP包装说明:TSSOP-8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
配置:COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):5 A最大漏极电流 (ID):5 A
最大漏源导通电阻:0.035 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1.5 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STC5NF30V 数据手册

 浏览型号STC5NF30V的Datasheet PDF文件第2页浏览型号STC5NF30V的Datasheet PDF文件第3页浏览型号STC5NF30V的Datasheet PDF文件第4页浏览型号STC5NF30V的Datasheet PDF文件第5页浏览型号STC5NF30V的Datasheet PDF文件第6页浏览型号STC5NF30V的Datasheet PDF文件第7页 
STC5NF30V  
N-CHANNEL 30V - 0.027 - 5A TSSOP8  
2.7V-DRIVE STripFET™ II POWER MOSFET  
V
DSS  
R
I
D
TYPE  
DS(on)  
< 0.031 ( @ 4.5 V )  
< 0.035 ( @ 2.7 V )  
STC5NF30V  
30 V  
5 A  
TYPICAL R (on) = 0.027 @ 4.5 V  
DS  
TYPICAL R (on) = 0.031 @ 2.7 V  
DS  
ULTRA LOW THRESHOLD  
GATE DRIVE (2.7 V)  
STANDARD OUTLINE FOR EASY  
AUTOMATED SURFACE MOUNT ASSEMBLY  
TSSOP8  
DESCRIPTION  
This Power MOSFET is the latest development of  
STMicroelectronis unique "Single Feature Size™"  
strip-based process. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalanche characteristics and  
less critical alignment steps therefore a remark-  
able manufacturing reproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
DC MOTOR DRIVE  
DC-DC CONVERTERS  
BATTERY MANAGEMENT IN NOMADIC  
EQUIPMENT  
POWER MANAGEMENT IN  
PORTABLE/DESKTOP PCs  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
30  
Unit  
V
V
Drain-source Voltage (V = 0)  
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
20  
V
DGR  
GS  
V
Gate- source Voltage  
± 12  
5
V
GS  
I
Drain Current (continuous) at T = 25°C  
A
D
C
I
D
Drain Current (continuous) at T = 100°C  
3
A
C
I ()  
DM  
Drain Current (pulsed)  
20  
A
P
Total Dissipation at T = 25°C  
1.5  
W
tot  
C
() Pulse width limited by safe operating area.  
June 2003  
1/8  
.

与STC5NF30V相关器件

型号 品牌 获取价格 描述 数据表
STC5NF30V_06 STMICROELECTRONICS

获取价格

N-channel 30V - 0.027ヘ - 5A - TSSOP8 2.7V-dri
STC6.8-10C2 VISHAY

获取价格

Subminiature, Leaded Solid Tantalum Capacitors Polar or Non-Polar
STC6.810C2AJ VISHAY

获取价格

CAPACITOR, TANTALUM, SOLID, POLARIZED, 10 V, 6.8 uF, THROUGH HOLE MOUNT, AXIAL LEADED
STC6.810C2AM VISHAY

获取价格

CAPACITOR, TANTALUM, SOLID, POLARIZED, 10 V, 6.8 uF, THROUGH HOLE MOUNT, AXIAL LEADED
STC6.810C2RJ VISHAY

获取价格

CAPACITOR, TANTALUM, SOLID, POLARIZED, 10 V, 6.8 uF, THROUGH HOLE MOUNT, RADIAL LEADED
STC6.810C2RK VISHAY

获取价格

CAPACITOR, TANTALUM, SOLID, POLARIZED, 10 V, 6.8 uF, THROUGH HOLE MOUNT, RADIAL LEADED
STC6.810C2RM VISHAY

获取价格

CAPACITOR, TANTALUM, SOLID, POLARIZED, 10 V, 6.8 uF, THROUGH HOLE MOUNT, RADIAL LEADED
STC6.8-15N2 VISHAY

获取价格

Subminiature, Leaded Solid Tantalum Capacitors Polar or Non-Polar
STC6.815N2AJ VISHAY

获取价格

CAPACITOR, TANTALUM, SOLID, NON-POLARIZED, 15 V, 6.8 uF, THROUGH HOLE MOUNT, AXIAL LEADED
STC6.815N2RK VISHAY

获取价格

CAPACITOR, TANTALUM, SOLID, NON-POLARIZED, 15 V, 6.8 uF, THROUGH HOLE MOUNT, RADIAL LEADED