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STC5NF20V PDF预览

STC5NF20V

更新时间: 2024-11-18 22:28:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
8页 273K
描述
N-CHANNEL 20V - 0.030ohm - 5A TSSOP8 2.7V-DRIVE STripFET⑩ II POWER MOSFET

STC5NF20V 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TSSOP包装说明:ROHS COMPLIANT, TSSOP-8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.8
其他特性:LOW THRESHOLD配置:COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):5 A
最大漏极电流 (ID):5 A最大漏源导通电阻:0.045 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e4湿度敏感等级:1
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1.6 W
最大脉冲漏极电流 (IDM):20 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STC5NF20V 数据手册

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STC5NF20V  
N-CHANNEL 20V - 0.030 - 5A TSSOP8  
2.7V-DRIVE STripFET™ II POWER MOSFET  
V
DSS  
R
I
D
TYPE  
DS(on)  
< 0.040 ( @ 4.5 V )  
< 0.045 ( @ 2.7 V )  
STC5NF20V  
20 V  
5 A  
TYPICAL R (on) = 0.030 @ 4.5 V  
DS  
TYPICAL R (on) = 0.037 @ 2.7 V  
DS  
ULTRA LOW THRESHOLD  
GATE DRIVE (2.7 V)  
STANDARD OUTLINE FOR EASY  
AUTOMATED SURFACE MOUNT ASSEMBLY  
TSSOP8  
DESCRIPTION  
This Power MOSFET is the latest development of  
STMicroelectronis unique "Single Feature Size™"  
strip-based process. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalanche characteristics and  
less critical alignment steps therefore a remark-  
able manufacturing reproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
DC MOTOR DRIVE  
DC-DC CONVERTERS  
BATTERY MANAGEMENT IN NOMADIC  
EQUIPMENT  
POWER MANAGEMENT IN  
PORTABLE/DESKTOP PCs  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
20  
Unit  
V
V
Drain-source Voltage (V = 0)  
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
20  
V
DGR  
GS  
V
Gate- source Voltage  
± 12  
5
V
GS  
I
Drain Current (continuous) at T = 25°C  
A
D
C
I
D
Drain Current (continuous) at T = 100°C  
3
A
C
I ()  
DM  
Drain Current (pulsed)  
20  
A
P
Total Dissipation at T = 25°C  
1.5  
W
tot  
C
() Pulse width limited by safe operating area.  
February 2003  
1/8  
.

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