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STB80N4F6AG PDF预览

STB80N4F6AG

更新时间: 2023-12-20 18:44:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
15页 849K
描述
汽车级N沟道40 V、5.5 mOhm典型值、80 A STripFET F6功率MOSFET,D2PAK封装

STB80N4F6AG 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99风险等级:1.53
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

STB80N4F6AG 数据手册

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STB80N4F6AG  
Automotive-grade N-Channel 40 V, 5.5 mΩ typ.,80 A  
STripFET™ F6 Power MOSFET in a D²PAK package  
Datasheet - production data  
Features  
Order code  
VDS  
RDS(on) max.  
ID  
TAB  
STB80N4F6AG  
40 V  
6 mΩ  
80 A  
Designed for automotive applications and  
AEC-Q101 qualified  
3
1
Very low on-resistance  
Very low gate charge  
High avalanche ruggedness  
Low gate drive power loss  
2
D PAK  
Applications  
Figure 1: Internal schematic diagram  
Switching applications  
D(2, TAB)  
Description  
This device is an N-channel Power MOSFET  
developed using the STripFET™ F6 technology  
with a new trench gate structure. The resulting  
Power MOSFET exhibits very low RDS(on) in all  
packages.  
G(1)  
S(3)  
AM01475v1_Tab  
Table 1: Device summary  
Order code  
Marking  
Package  
D²PAK  
Packaging  
STB80N4F6AG  
80N4F6  
Tape and Reel  
November 2015  
DocID027978 Rev 2  
1/15  
www.st.com  
This is information on a product in full production.  

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