Datasheet > STB80N4F6AG

STB80N4F6AG

更新时间： 2024-11-17 14:57:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	849K
描述
汽车级N沟道40 V、5.5 mOhm典型值、80 A STripFET F6功率MOSFET，D2PAK封装

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中文翻译

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技术参数
数据手册

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STB80N4F6AG 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	1.53
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

STB80N4F6AG 数据手册

STB80N4F6AG

Automotive-grade N-Channel 40 V, 5.5 mΩ typ.,80 A

STripFET™ F6 Power MOSFET in a D²PAK package

Datasheet - production data

Features

Order code

V_DS

R_DS(on)max.

I_D

TAB

STB80N4F6AG

40 V

6 mΩ

80 A



Designed for automotive applications and

AEC-Q101 qualified



Very low on-resistance

Very low gate charge

High avalanche ruggedness

Low gate drive power loss

D PAK

Applications

Figure 1: Internal schematic diagram



Switching applications

D(2, TAB)

Description

This device is an N-channel Power MOSFET

developed using the STripFET™ F6 technology

with a new trench gate structure. The resulting

Power MOSFET exhibits very low R_DS(on)in all

packages.

G(1)

S(3)

AM01475v1_Tab

Table 1: Device summary

Order code

Marking

Package

D²PAK

Packaging

STB80N4F6AG

80N4F6

Tape and Reel

November 2015

DocID027978 Rev 2

1/15

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...15

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