Datasheet > STB7N52K3_09

STB7N52K3_09

更新时间： 2024-01-29 13:26:28

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
18页	1197K
描述
N-channel 525 V, 0.84 OHM, 6.2 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3 Power MOSFET

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中文翻译

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数据手册

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STB7N52K3_09 数据手册

STB7N52K3, STD7N52K3

STF7N52K3, STP7N52K3

N-channel 525 V, 0.84 Ω, 6.2 A, D²PAK, DPAK, TO-220FP, TO-220

SuperMESH3™ Power MOSFET

Features

R_DS(on)

max

Type

V_DSS

I_D

STB7N52K3 525 V < 0.98 Ω

STD7N52K3 525 V < 0.98 Ω

6.2 A

90 W

DPAK

D²PAK

STF7N52K3 525 V < 0.98 Ω 6.2 A ⁽¹⁾25 W

STP7N52K3 525 V < 0.98 Ω

6.2 A

90 W

1. Limited by package

■ 100% avalanche tested

TO-220¹

■ Extremely high dv/dt capability

■ Gate charge minimized

TO-220FP

■ Very low intrinsic capacitances

■ Improved diode reverse recovery

Figure 1.

Internal schematic diagram

characteristics

D(2)

■ Zener-protected

Application

■ Switching applications

G(1)

Description

SuperMESH3™ is a new Power MOSFET

technology that is obtained via improvements

applied to STMicroelectronics’ SuperMESH™

technology combined with a new optimized

vertical structure. The resulting product has an

extremely low on resistance, superior dynamic

performance and high avalanche capability,

making it especially suitable for the most

demanding applications.

S(3)

AM01476v1

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STB7N52K3

STD7N52K3

STF7N52K3

STP7N52K3

7N52K3

D²PAK

DPAK

Tape and reel

Tube

TO-220FP

TO-220

Tube

September 2009

Doc ID 14896 Rev 2

1/18

www.st.com

12 3 4 5 6 7...18

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