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STB7NB40 PDF预览

STB7NB40

更新时间: 2024-02-08 01:14:26
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意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
6页 63K
描述
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

STB7NB40 数据手册

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STB7NB40  
N - CHANNEL ENHANCEMENT MODE  
PowerMESH MOSFET  
PRELIMINARY DATA  
TYPE  
VDSS  
RDS(on)  
< 0.9 Ω  
ID  
STB7NB40  
400 V  
7.0 A  
TYPICAL RDS(on) = 0.75 Ω  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
VERY LOW INTRINSIC CAPACITANCES  
GATE CHARGE MINIMIZED  
FOR THROUGH-HOLE VERSION CONTACT  
SALES OFFICE  
3
1
D2PAK  
TO-263  
DESCRIPTION  
(Suffix ”T4”)  
Using the latest high voltage technology, SGS-Thomson  
has designed an advanced family of power Mosfets with  
outstanding performances. The new patent pending strip  
layout coupled with the Company’s proprietary edge  
termination structure, gives the lowest RDS(on) per area,  
exceptional avalanche and dv/dt capabilities and  
unrivalled gate charge and switching characteristics.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITCH MODE POWER SUPPLIES (SMPS)  
DC-AC CONVERTERS FOR WELDING  
EQUIPMENT AND UNINTERRUPTIBLE  
POWER SUPPLIES AND MOTOR DRIVE  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
STB7NB40  
400  
Unit  
VDS  
VDGR  
VGS  
ID  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
Drain Current (continuous) at Tc = 25 oC  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
V
V
400  
± 30  
V
7
A
ID  
4.4  
A
I
DM()  
28  
A
Ptot  
Total Dissipation at Tc = 25 oC  
100  
W
Derating Factor  
0.8  
W/oC  
V/ns  
oC  
oC  
dv/dt(1) Peak Diode Recovery voltage slope  
4.5  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
Max. Operating Junction Temperature  
150  
() Pulse width limited by safe operating area  
(1) ISD 7A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX  
October 1997  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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