是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | not_compliant | 风险等级: | 5.69 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 290 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 800 V |
最大漏极电流 (Abs) (ID): | 6.5 A | 最大漏极电流 (ID): | 6.5 A |
最大漏源导通电阻: | 1.5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 135 W | 最大脉冲漏极电流 (IDM): | 26 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STB7NK80Z | STMICROELECTRONICS |
获取价格 |
N-CHANNEL800V-1.5ohm - 5.2A TO-220/TO-220FP/I |
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STB7NK80Z-1 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL800V-1.5ohm - 5.2A TO-220/TO-220FP/I |
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STB7NK80ZT4 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL800V-1.5ohm - 5.2A TO-220/TO-220FP/I |
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STB80N4F6AG | STMICROELECTRONICS |
获取价格 |
汽车级N沟道40 V、5.5 mOhm典型值、80 A STripFET F6功率MOSF |
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STB80NE03L-06 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 30V - 0.005ohm - 80A D2PAK / I2PAK |
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STB80NE03L-06_06 | STMICROELECTRONICS |
获取价格 |
N-channel 30V - 0.005ohm - 85A - D2PAK STripFET TM Power MOSFET |
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STB80NE03L-06-1 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 30V - 0.005ohm - 80A D2PAK / I2PAK |
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STB80NE03L06T4 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 80A I(D) | TO-263AA |
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STB80NE03L-06T4 | STMICROELECTRONICS |
获取价格 |
80A, 30V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3 |
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STB80NE06-10 | STMICROELECTRONICS |
获取价格 |
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET |
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