Datasheet > STB7NB60-1

STB7NB60-1

更新时间： 2024-02-01 14:54:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
9页	101K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 7.2A I(D) \| TO-262AA

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STB7NB60-1 数据手册

STB7NB60

N - CHANNEL 600V - 1.0 OMH - 7.2A - I PAK/D PAK

PowerMESH MOSFET

TYPE

V_DSS

R_DS(on)

I_D

STB7NB60

600 V

< 1.2 Ω

7.2 A

■

TYPICAL R_DS(on)= 1.0 Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATECHARGE MINIMIZED

I²PAK

TO-262

(suffix ”-1”)

D²PAK

TO-252

DESCRIPTION

Using the latest high voltage MESH OVERLAY

process, SGS-Thomson has designed an

advanced family of power MOSFETs with

outstanding performances. The new patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

(Suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SWITCH MODE POWER SUPPLIES (SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

Parameter

Value

600

Unit

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

V_DGR

V_GS

I_D

600

± 30

7.2

Drain Current (continuous) at T_c= 25 ^oC

I_D

Drain Current (continuous) at T_c= 100 C

4.5

I_DM(• )

P_tot

Drain Current (pulsed)

28.8

125

Total Dissipation at T_c= 25 C

Derating Factor

1.0

W/^oC

V/ns

^oC

dv/dt(1) Peak Diode Recovery voltage slope

4.5

T_stg

T_j

Storage Temperature

-65 to 150

Max. Operating Junction Temperature

150

(•) Pulse width limited by safe operating area

(1) I_SD≤ 7A, di/dt ≤ 200 A/µs, V_DD≤ V_(BR)DSS, Tj ≤ T_JMAX

1/8

June 1998

12 3 4 5 6 7...9

中文翻译

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