是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | not_compliant |
风险等级: | 5.69 | Is Samacsys: | N |
雪崩能效等级(Eas): | 650 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 600 V | 最大漏极电流 (Abs) (ID): | 22 A |
最大漏极电流 (ID): | 22 A | 最大漏源导通电阻: | 0.25 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 192 W | 最大脉冲漏极电流 (IDM): | 80 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STB22NM60-1 | STMICROELECTRONICS |
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N-CHANNEL 600V - 0.19 ohm - 22A TO-220/FP/D2P | |
STB22NM60N | STMICROELECTRONICS |
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N-channel 600 V, 0.2 Ω, 16 A MDmesh⢠II Po | |
STB22NM60T4 | STMICROELECTRONICS |
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22A, 600V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | |
STB22NS25Z | STMICROELECTRONICS |
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N-CHANNEL 250V - 0.13ohm - 22A TO-220/D2PAK Z | |
STB22NS25Z_06 | STMICROELECTRONICS |
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N-channel 250V - 0.13Ω - 22A - TO-220 / D2PAK | |
STB22NS25ZT4 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 22A I(D) | TO-263AB | |
STB230NH03L | STMICROELECTRONICS |
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N-channel 30V - 80A - D2PAK STripFET? Power MOSFET | |
STB230NH03LTRL | STMICROELECTRONICS |
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80A, 30V, 0.003ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, D2PAK, SC06140, 3 PIN | |
STB23N80K5 | STMICROELECTRONICS |
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N沟道800 V、0.23 Ohm典型值、16 A MDmesh K5功率MOSFET,D | |
STB23NM50N | STMICROELECTRONICS |
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N-channel 500 V, 0.162 Ω, 17 A TO-220, TO-22 |