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STB230NH03L PDF预览

STB230NH03L

更新时间: 2024-11-15 09:01:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
13页 415K
描述
N-channel 30V - 80A - D2PAK STripFET? Power MOSFET

STB230NH03L 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.81
雪崩能效等级(Eas):1150 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):80 A
最大漏极电流 (ID):80 A最大漏源导通电阻:0.003 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):300 W
最大脉冲漏极电流 (IDM):1000 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STB230NH03L 数据手册

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STB230NH03L  
N-channel 30V - 80A - D2PAK  
STripFET™ Power MOSFET  
Features  
Type  
VDSS  
RDS(on)  
ID  
STB230NH03L  
30V  
< 3mΩ  
80A(1)  
1. This value is limited by package  
R  
Qg industry’s benchmark  
DS(on)  
3
1
Conduction losses reduced  
Switching losses reduced  
Low threshold device  
PAK  
Description  
This product utilizes the latest advanced design  
rules of ST’s proprietary STripFET™ technology.  
This is suitable for the most demanding DC-DC  
converter application where high efficiency is to  
be achieved.  
Internal schematic diagram  
Applications  
Switching applications  
– Specifically designed and optimized for  
high efficiency DC/DC converters  
– OR-ing  
Order code  
Part number  
Marking  
Package  
Packaging  
STB230NH03L  
B230NH03L  
PAK  
Tape & reel  
June 2007  
Rev1  
1/13  
www.st.com  
13  

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