Datasheet > STB14N80K5

STB14N80K5

更新时间： 2024-11-26 14:57:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	903K
描述
N沟道800 V、0.400 Ohm典型值、12 A MDmesh K5功率MOSFET，D2PAK封装

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中文翻译

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技术参数
数据手册

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STB14N80K5 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	17 weeks
风险等级：	5.76	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

STB14N80K5 数据手册

STB14N80K5

N-channel 800 V, 0.400 Ω typ., 12 A MDmesh™ K5

Power MOSFET in a D²PAK package

Datasheet - production data

Features

Order code

V_DS

R_DS(on)max.

I_D

TAB

STB14N80K5

800 V

0.445 Ω

12 A



Industry’s lowest R_DS(on)x area

Industry’s best figure of merit (FoM)

Ultra-low gate charge

100% avalanche tested

Zener-protected

D²

PAK

Applications



Switching applications

Figure 1: Internal schematic diagram

Description

This very high voltage N-channel Power

MOSFET is designed using MDmesh™ K5

technology based on an innovative proprietary

vertical structure. The result is a dramatic

reduction in on-resistance and ultra-low gate

charge for applications requiring superior power

density and high efficiency.

Table 1: Device summary

Order code

Marking

Package

Packing

STB14N80K5

14N80K5

D²PAK

Tape and reel

February 2016

DocID027723 Rev 1

1/16

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...16

中文翻译

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