STB150NF55 STP150NF55
STW150NF55
N-CHANNEL 55V - 0.005 Ω -120A D²PAK/TO-220/TO-247
STripFET™ II POWER MOSFET
AUTOMOTIVE SPECIFIC
V
DSS
R
I
D
TYPE
DS(on)
STB150NF55
STP150NF55
STP150NF55
55 V
55 V
55 V
<0.006 Ω
<0.006 Ω
<0.006 Ω
120 A(**)
120 A(**)
120 A(**)
■
■
TYPICAL R (on) = 0.005 Ω
DS
3
1
2
SURFACE-MOUNTING D PAK (TO-263)
POWER PACKAGE
2
D PAK
TO-263
(Suffix “T4”)
TO-247
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
3
2
1
TO-220
less critical alignment steps therefore
remarkable manufacturing reproducibility.
a
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
■
■
HIGH CURRENT, HIGH SWITCHING SPEED
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
AUTOMOTIVE
Ordering Information
SALES TYPE
STB150NF55T4
STP150NF55
MARKING
B150NF55
P150NF55
W150NF55
PACKAGE
D PAK
TO-220
TO-247
PACKAGING
TAPE & REEL
2
TUBE
TUBE
STW150NF55
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Drain-source Voltage (V = 0)
GS
Value
55
55
Unit
V
V
V
DS
V
Drain-gate Voltage (R = 20 kΩ)
DGR
GS
V
Gate- source Voltage
Drain Current (continuous) at T = 25°C
Drain Current (continuous) at T = 100°C
± 20
120
106
480
300
2.0
8
V
A
A
A
GS
I (**)
D
C
I
D
C
I
(•)
Drain Current (pulsed)
DM
P
Total Dissipation at T = 25°C
W
tot
C
Derating Factor
W/°C
V/ns
mJ
(1)
(2)
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
dv/dt
E
850
AS
T
stg
-55 to 175
°C
T
Operating Junction Temperature
j
(•) Pulse width limited by safe operating area.
(**) Current Limited by Package
(1) I ≤120A, di/dt ≤200A/µs, V ≤ V
, T ≤ T
JMAX
SD
DD
(BR)DSS
j
o
(2) Starting T = 25 C, I = 60 A, V = 30V
j
D
DD
October 2002
1/14