Datasheet > STB150NF55

STB150NF55

更新时间： 2024-09-17 22:29:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	552K
描述
N-CHANNEL 55V - 0.005 ohm -120A DPAK/TO-220/TO-247 STripFET⑩ II POWER MOSFET

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STB150NF55 数据手册

STB150NF55 STP150NF55

STW150NF55

N-CHANNEL 55V - 0.005 Ω -120A D²PAK/TO-220/TO-247

STripFET™ II POWER MOSFET

AUTOMOTIVE SPECIFIC

DSS

TYPE

DS(on)

STB150NF55

STP150NF55

55 V

<0.006 Ω

120 A(**)

■

TYPICAL R (on) = 0.005 Ω

SURFACE-MOUNTING D PAK (TO-263)

POWER PACKAGE

D PAK

TO-263

(Suffix “T4”)

TO-247

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™"

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

TO-220

less critical alignment steps therefore

remarkable manufacturing reproducibility.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SWITCHING SPEED

SOLENOID AND RELAY DRIVERS

MOTOR CONTROL, AUDIO AMPLIFIERS

DC-DC & DC-AC CONVERTERS

AUTOMOTIVE

Ordering Information

SALES TYPE

STB150NF55T4

STP150NF55

MARKING

B150NF55

P150NF55

W150NF55

PACKAGE

D PAK

TO-220

TO-247

PACKAGING

TAPE & REEL

TUBE

STW150NF55

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-source Voltage (V = 0)

Value

Unit

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

Drain Current (continuous) at T = 25°C

Drain Current (continuous) at T = 100°C

± 20

120

106

480

300

2.0

I (**)

(•)

Drain Current (pulsed)

Total Dissipation at T = 25°C

tot

Derating Factor

W/°C

V/ns

(1)

(2)

Peak Diode Recovery voltage slope

Single Pulse Avalanche Energy

Storage Temperature

dv/dt

850

stg

-55 to 175

°C

Operating Junction Temperature

(•) Pulse width limited by safe operating area.

(**) Current Limited by Package

(1) I ≤120A, di/dt ≤200A/µs, V ≤ V

, T ≤ T

JMAX

(BR)DSS

(2) Starting T = 25 C, I = 60 A, V = 30V

October 2002

1/14

12 3 4 5 6 7...14

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