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STB150NF55 PDF预览

STB150NF55

更新时间: 2024-11-23 22:29:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
14页 552K
描述
N-CHANNEL 55V - 0.005 ohm -120A DPAK/TO-220/TO-247 STripFET⑩ II POWER MOSFET

STB150NF55 数据手册

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STB150NF55 STP150NF55  
STW150NF55  
N-CHANNEL 55V - 0.005 -120A D²PAK/TO-220/TO-247  
STripFET™ II POWER MOSFET  
AUTOMOTIVE SPECIFIC  
V
DSS  
R
I
D
TYPE  
DS(on)  
STB150NF55  
STP150NF55  
STP150NF55  
55 V  
55 V  
55 V  
<0.006 Ω  
<0.006 Ω  
<0.006 Ω  
120 A(**)  
120 A(**)  
120 A(**)  
TYPICAL R (on) = 0.005 Ω  
DS  
3
1
2
SURFACE-MOUNTING D PAK (TO-263)  
POWER PACKAGE  
2
D PAK  
TO-263  
(Suffix “T4”)  
TO-247  
DESCRIPTION  
This Power MOSFET is the latest development of  
STMicroelectronis unique "Single Feature Size™"  
strip-based process. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalanche characteristics and  
3
2
1
TO-220  
less critical alignment steps therefore  
remarkable manufacturing reproducibility.  
a
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SWITCHING SPEED  
SOLENOID AND RELAY DRIVERS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
DC-DC & DC-AC CONVERTERS  
AUTOMOTIVE  
Ordering Information  
SALES TYPE  
STB150NF55T4  
STP150NF55  
MARKING  
B150NF55  
P150NF55  
W150NF55  
PACKAGE  
D PAK  
TO-220  
TO-247  
PACKAGING  
TAPE & REEL  
2
TUBE  
TUBE  
STW150NF55  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Drain-source Voltage (V = 0)  
GS  
Value  
55  
55  
Unit  
V
V
V
DS  
V
Drain-gate Voltage (R = 20 k)  
DGR  
GS  
V
Gate- source Voltage  
Drain Current (continuous) at T = 25°C  
Drain Current (continuous) at T = 100°C  
± 20  
120  
106  
480  
300  
2.0  
8
V
A
A
A
GS  
I (**)  
D
C
I
D
C
I
()  
Drain Current (pulsed)  
DM  
P
Total Dissipation at T = 25°C  
W
tot  
C
Derating Factor  
W/°C  
V/ns  
mJ  
(1)  
(2)  
Peak Diode Recovery voltage slope  
Single Pulse Avalanche Energy  
Storage Temperature  
dv/dt  
E
850  
AS  
T
stg  
-55 to 175  
°C  
T
Operating Junction Temperature  
j
() Pulse width limited by safe operating area.  
(**) Current Limited by Package  
(1) I 120A, di/dt 200A/µs, V V  
, T T  
JMAX  
SD  
DD  
(BR)DSS  
j
o
(2) Starting T = 25 C, I = 60 A, V = 30V  
j
D
DD  
October 2002  
1/14  

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