Datasheet > ST93C46B3

ST93C46B3

更新时间： 2024-11-13 06:25:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管
页数	文件大小	规格书
13页	111K
描述
128X8 MICROWIRE BUS SERIAL EEPROM, PDIP8, 0.40 MM LEAD FRAME, SKINNY, PLASTIC, DIP-8

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数据手册

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ST93C46B3 数据手册

ST93C46A,46C,46T

ST93C47C,47T

1K (64 x 16 or 128 x 8) SERIAL MICROWIRE EEPROM

NOT FOR NEW DESIGN

1 MILLION ERASE/WRITE CYCLES, with

40 YEARS DATARETENTION

DUAL ORGANIZATION: 64 x 16 or 128 x 8

BYTE/WORDand ENTIRE MEMORY

PROGRAMMING INSTRUCTIONS

SELF-TIMED PROGRAMMING CYCLE with

AUTO-ERASE

READY/BUSY SIGNAL DURING

PROGRAMMING

SINGLE SUPPLY VOLTAGE:

PSDIP8 (B)

0.4mm Frame

SO8 (M)

150mil Width

– 4.5V to 5.5V for ST93C46 version

– 3V to 5.5V for ST93C47 version

SEQUENTIAL READ OPERATION

5ms TYPICAL PROGRAMMING TIME

ENHANCED ESD/LATCH UP

PERFORMANCE for ”C” VERSION

Figure 1. Logic Diagram

ST93C46A, ST93C46C, ST93C46T,

ST93C47C, ST93C47T are replaced by the

M93C46

DESCRIPTION

This specification covers a range of 1K bit serial

EEPROM products, the ST93C46A,46C,46T

specified at 5V±10% and the ST93C47C,47T

specifiedat 3V to 5.5V.

In the text, products are referred to as ST93C46.

The ST93C46 is a 1K bit Electrically Erasable

ProgrammableMemory(EEPROM)fabricatedwith

SGS-THOMSON’s High EnduranceSingle Polysili-

con CMOS technology. The memory is accessed

through a serial input (D) and output (Q).

ST93C46

ST93C47

Table 1. Signal Names

ORG

Chip Select Input

Serial Data Input

Serial Data Output

Serial Clock

AI00871C

ORG

V_CC

V_SS

Organisation Select

Supply Voltage

Ground

June 1997

1/13

This is information on a product still in production but not recommended for new designs.

12 3 4 5 6 7...13

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