Datasheet > ST93C46CB3013TR

ST93C46CB3013TR

更新时间： 2024-11-15 22:20:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
13页	113K
描述
1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM

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中文翻译

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数据手册

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ST93C46CB3013TR 数据手册

ST93C46A,46C,46T

ST93C47C,47T

1K (64 x 16 or 128 x 8) SERIAL MICROWIRE EEPROM

NOT FOR NEW DESIGN

1 MILLION ERASE/WRITE CYCLES, with

40 YEARS DATARETENTION

DUAL ORGANIZATION: 64 x 16 or 128 x 8

BYTE/WORDand ENTIRE MEMORY

PROGRAMMING INSTRUCTIONS

SELF-TIMED PROGRAMMING CYCLE with

AUTO-ERASE

READY/BUSY SIGNAL DURING

PROGRAMMING

SINGLE SUPPLY VOLTAGE:

PSDIP8 (B)

0.4mm Frame

SO8 (M)

150mil Width

– 4.5V to 5.5V for ST93C46 version

– 3V to 5.5V for ST93C47 version

SEQUENTIAL READ OPERATION

5ms TYPICAL PROGRAMMING TIME

ENHANCED ESD/LATCH UP

PERFORMANCE for ”C” VERSION

Figure 1. Logic Diagram

ST93C46A, ST93C46C, ST93C46T,

ST93C47C, ST93C47T are replaced by the

M93C46

DESCRIPTION

This specification covers a range of 1K bit serial

EEPROM products, the ST93C46A,46C,46T

specified at 5V±10% and the ST93C47C,47T

specifiedat 3V to 5.5V.

In the text, products are referred to as ST93C46.

The ST93C46 is a 1K bit Electrically Erasable

ProgrammableMemory(EEPROM)fabricatedwith

SGS-THOMSON’s High EnduranceSingle Polysili-

con CMOS technology. The memory is accessed

through a serial input (D) and output (Q).

ST93C46

ST93C47

Table 1. Signal Names

ORG

Chip Select Input

Serial Data Input

Serial Data Output

Serial Clock

AI00871C

ORG

V_CC

V_SS

Organisation Select

Supply Voltage

Ground

June 1997

1/13

This is information on a product still in production but not recommended for new designs.

12 3 4 5 6 7...13

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