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ST93C46TB1TR PDF预览

ST93C46TB1TR

更新时间: 2024-09-27 22:21:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
13页 113K
描述
1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM

ST93C46TB1TR 数据手册

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ST93C46A,46C,46T  
ST93C47C,47T  
1K (64 x 16 or 128 x 8) SERIAL MICROWIRE EEPROM  
NOT FOR NEW DESIGN  
1 MILLION ERASE/WRITE CYCLES, with  
40 YEARS DATARETENTION  
DUAL ORGANIZATION: 64 x 16 or 128 x 8  
BYTE/WORDand ENTIRE MEMORY  
PROGRAMMING INSTRUCTIONS  
SELF-TIMED PROGRAMMING CYCLE with  
AUTO-ERASE  
8
8
READY/BUSY SIGNAL DURING  
PROGRAMMING  
1
1
SINGLE SUPPLY VOLTAGE:  
PSDIP8 (B)  
0.4mm Frame  
SO8 (M)  
150mil Width  
– 4.5V to 5.5V for ST93C46 version  
– 3V to 5.5V for ST93C47 version  
SEQUENTIAL READ OPERATION  
5ms TYPICAL PROGRAMMING TIME  
ENHANCED ESD/LATCH UP  
PERFORMANCE for ”C” VERSION  
Figure 1. Logic Diagram  
ST93C46A, ST93C46C, ST93C46T,  
ST93C47C, ST93C47T are replaced by the  
M93C46  
DESCRIPTION  
This specification covers a range of 1K bit serial  
EEPROM products, the ST93C46A,46C,46T  
specified at 5V±10% and the ST93C47C,47T  
specifiedat 3V to 5.5V.  
V
CC  
In the text, products are referred to as ST93C46.  
The ST93C46 is a 1K bit Electrically Erasable  
ProgrammableMemory(EEPROM)fabricatedwith  
SGS-THOMSON’s High EnduranceSingle Polysili-  
con CMOS technology. The memory is accessed  
through a serial input (D) and output (Q).  
D
C
Q
ST93C46  
ST93C47  
S
Table 1. Signal Names  
ORG  
S
Chip Select Input  
Serial Data Input  
Serial Data Output  
Serial Clock  
D
V
SS  
AI00871C  
Q
C
ORG  
VCC  
VSS  
Organisation Select  
Supply Voltage  
Ground  
June 1997  
1/13  
This is information on a product still in production but not recommended for new designs.  

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