Datasheet > ST330S12M0L

ST330S12M0L

更新时间： 2024-11-05 07:09:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	69K
描述
Silicon Controlled Rectifier, 520 A, 1200 V, SCR, TO-209AE

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ST330S12M0L 数据手册

Bulletin I25156 rev. B 01/94

ST330S SERIES

PHASE CONTROL THYRISTORS

Stud Version

Features

330A

Center amplifying gate

Hermetic metal case with ceramic insulator

International standard case TO-209AE (TO-118)

Threaded studs UNF 3/4 - 16UNF2A or ISO M24x1.5

Compression Bonded Encapsulation for heavy duty

operations such as severe thermal cycling

TypicalApplications

DC motor controls

Controlled DC power supplies

AC controllers

Major Ratings and Characteristics

Parameters

I_T(AV)

ST330S

Units

330

°C

@ T_C

I_T(RMS)

I_TSM

520

@ 50Hz

@ 60Hz

@ 50Hz

@ 60Hz

9000

9420

I²t

405

KA²s

370

_DRM/V_RRM

400 to 1600

100

typical

µs

°C

case style

TO-209AE (TO-118)

T_J

- 40 to 125

www.irf.com

12 3 4 5 6 7 8

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与ST330S12M0L相关器件

型号	品牌	获取价格	描述	数据表
ST330S12M1	VISHAY	获取价格	Silicon Controlled Rectifier, 520 A, 1200 V, SCR, TO-209AE
ST330S12M1L	VISHAY	获取价格	Silicon Controlled Rectifier, 520 A, 1200 V, SCR, TO-209AE
ST330S12P0	INFINEON	获取价格	PHASE CONTROL THYRISTORS Stud Version
ST330S12P0	VISHAY	获取价格	Silicon Controlled Rectifier, 520A I(T)RMS, 330000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 E
ST330S12P0L	VISHAY	获取价格	Silicon Controlled Rectifier, 330000mA I(T), 1200V V(DRM)
ST330S12P0LPBF	INFINEON	获取价格	暂无描述
ST330S12P0PBF	INFINEON	获取价格	Silicon Controlled Rectifier, 520A I(T)RMS, 330000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 E
ST330S12P0PBF	VISHAY	获取价格	Silicon Controlled Rectifier, 520A I(T)RMS, 330000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 E
ST330S12P1	VISHAY	获取价格	Silicon Controlled Rectifier, 520A I(T)RMS, 330000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 E
ST330S12P1L	VISHAY	获取价格	Silicon Controlled Rectifier, 330000mA I(T), 1200V V(DRM)