Datasheet > ST330S12P3

ST330S12P3

更新时间： 2024-11-04 20:00:31

品牌	Logo	应用领域
威世 - VISHAY		/
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8页	83K
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数据手册

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ST330S12P3 数据手册

Bulletin I25156 rev. C 03/03

ST330S SERIES

PHASE CONTROL THYRISTORS

Stud Version

Features

Center amplifying gate

Hermetic metal case with ceramic insulator

International standard case TO-209AE (TO-118)

330A

Compression Bonded Encapsulation for heavy duty

operations such as severe thermal cycling

Typical Applications

DC motor controls

Controlled DC power supplies

AC controllers

Major Ratings and Characteristics

Parameters

I_T(AV)

ST330S

330

Units

@ T_C

°C

I_T(RMS)

I_TSM

520

@ 50Hz

@ 60Hz

@ 50Hz

@ 60Hz

9000

9420

405

I²t

KA²s

370

V_DRM/V_RRM

400 to 2000

100

typical

µs

case style

TO-209AE (TO-118)

T_J

- 40 to 125

°C

www.irf.com

12 3 4 5 6 7 8

中文翻译

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与ST330S12P3相关器件

型号	品牌	获取价格	描述	数据表
ST330S12P3LPBF	VISHAY	获取价格	Silicon Controlled Rectifier, 520A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209A
ST330S12P3PBF	VISHAY	获取价格	Silicon Controlled Rectifier, 520A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209A
ST330S14F0PBF	INFINEON	获取价格	Silicon Controlled Rectifier, 520A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, TO-209A
ST330S14M0L	VISHAY	获取价格	Silicon Controlled Rectifier, 520A I(T)RMS, 330000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 E
ST330S14M0LPBF	VISHAY	获取价格	Silicon Controlled Rectifier, 520A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, TO-209A
ST330S14M0PBF	VISHAY	获取价格	Silicon Controlled Rectifier, 520A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, TO-209A
ST330S14M1	VISHAY	获取价格	Silicon Controlled Rectifier, 520A I(T)RMS, 330000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 E
ST330S14M1L	VISHAY	获取价格	Silicon Controlled Rectifier, 520A I(T)RMS, 330000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 E
ST330S14M3PBF	VISHAY	获取价格	Silicon Controlled Rectifier, 520A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, TO-209A
ST330S14P0	VISHAY	获取价格	Silicon Controlled Rectifier, 520 A, 1400 V, SCR, DO-209AE, TO-209AE, 3 PIN