是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-251 | 包装说明: | IPAK-3 |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.32 |
雪崩能效等级(Eas): | 50 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 600 V | 最大漏极电流 (Abs) (ID): | 0.9 A |
最大漏极电流 (ID): | 0.9 A | 最大漏源导通电阻: | 12 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-251 |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT APPLICABLE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 28 W |
最大脉冲漏极电流 (IDM): | 3 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT APPLICABLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
SSU1N60BTU-WS | FAIRCHILD | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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SSU2955 | ETC | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-251AA |
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SSU2N55 | SAMSUNG | Power Field-Effect Transistor, 2A I(D), 550V, 5ohm, 1-Element, N-Channel, Silicon, Metal-o |
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SSU2N60 | SAMSUNG | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-o |
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|
SSU2N60A | FAIRCHILD | Advanced Power MOSFET |
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SSU2N60ATU | FAIRCHILD | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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