Datasheet > SSU90N04-02B_15

SSU90N04-02B_15

更新时间： 2022-02-26 13:39:22

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	444K
描述
N-Ch Enhancement Mode Power MOSFET

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SSU90N04-02B_15 数据手册

SSU90N04-02B

N-Ch Enhancement Mode Power MOSFET

162A, 40V, R_DS(ON)2.3mΩ

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high

cell density trench process to provide Low R_DS(on)and to

ensure minimal power loss and heat dissipation.

Typical applications are DC-DC converters and power

management in portable and battery-powered products

such as computers, printers, PCMCIA cards, cellular

and cordless telephones.

TO-263

ꢁ

FEATURES

ꢀ

Low R_DS(on)provides higher efficiency and extends battery life.

Low thermal impedance copper leadframe DPAK saves board space.

Fast switching speed.

High performance trench technology.

Drain

PACKAGE INFORMATION

Package

MPQ

Leader Size

Millimeter

Gate

REF.

Min.

Max.

4.85

1.00

0.30

0.53

Min.

Max.

TO-263

0.8K

13 inch

4.00

0.68

0.00

0.36

1.10

1.45

1.34 REF

8.0

9.15

2.54 REF

1.50 REF

14.6

1.27 REF

15.85

Source

2.29

9.60

2.79

10.45

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_DS

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

162

360

Continuous Drain Current ¹

Pulsed Drain Current ²

T_C=25°C

I_D

I_DM

Continuous Source Current (Diode

Conduction) ¹

T_C=25°C

I _S

Total Power Dissipation

P _D

234

°C

Operating Junction and Storage Temperature Range

T_J, T_STG

-55~175

Thermal Resistance Rating

Maximum Thermal Resistance Junction-Ambient ³

R_θJA

R_θJC

°C / W

Maximum Thermal Resistance Junction-Case

Note:

0.64

1. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A

2. Pulse width limited by maximum junction temperature

3. Surface Mounted on 1” x 1” FR4 Board.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

13-Dec-2013 Rev.A

Page 1 of 4

12 3 4

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