SSU90N04-02B
N-Ch Enhancement Mode Power MOSFET
162A, 40V, RDS(ON) 2.3mΩ
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide Low RDS(on) and to
ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power
management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular
and cordless telephones.
TO-263
2
ꢁ
1
FEATURES
ꢀ
ꢀ
ꢀ
ꢀ
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe DPAK saves board space.
Fast switching speed.
High performance trench technology.
2
Drain
PACKAGE INFORMATION
Package
MPQ
Leader Size
Millimeter
Millimeter
1
Gate
REF.
REF.
Min.
Max.
4.85
1.00
0.30
0.53
Min.
Max.
TO-263
0.8K
13 inch
A
b
L4
C
4.00
0.68
0.00
0.36
c2
b2
D
1.10
1.45
1.34 REF
8.0
9.15
e
2.54 REF
L3
L1
E
1.50 REF
L
L2
14.6
1.27 REF
15.85
3
Source
2.29
9.60
2.79
10.45
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
VDS
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
40
V
V
A
A
VGS
±20
162
360
Continuous Drain Current 1
Pulsed Drain Current 2
TC=25°C
ID
IDM
Continuous Source Current (Diode
Conduction) 1
TC=25°C
TC=25°C
I S
90
A
Total Power Dissipation
P D
234
W
°C
Operating Junction and Storage Temperature Range
TJ, TSTG
-55~175
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient 3
RθJA
RθJC
43
°C / W
°C / W
Maximum Thermal Resistance Junction-Case
Note:
0.64
1. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A
2. Pulse width limited by maximum junction temperature
3. Surface Mounted on 1” x 1” FR4 Board.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
13-Dec-2013 Rev.A
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