SSU1N60ATU

更新时间： 2024-01-07 20:12:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管功率场效应晶体管开关脉冲
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SSU1N60ATU 数据手册

November 2001

SSR1N60B / SSU1N60B

600V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supplies.

•

0.9A, 600V, R

= 12Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 5.9 nC)

Low Crss ( typical 3.6 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

●

◀

▲

●

I-PAK

SSU Series

D-PAK

SSR Series

G D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

SSR1N60B / SSU1N60B

Units

Drain-Source Voltage

600

0.9

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

0.57

3.0

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 30

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

0.9

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

2.8

V/ns

dv/dt

5.5

Power Dissipation (T = 25°C) *

2.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.22

-55 to +150

W/°C

°C

T , T

stg

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

4.53

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

110

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. B, November 2001

12 3 4 5 6 7...9

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