SSU1N60ATU

更新时间： 2024-01-13 15:23:36

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SSU1N60ATU 数据手册

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

V_DS

I _SD

Driver

R_G

Same Type

as DUT

V_DD

V_GS

• dv/dt controlled by R_G

• I_SDcontrolled by pulse period

Gate Pulse Width

--------------------------

V_GS

D =

Gate Pulse Period

10V

( Driver )

I_FM, Body Diode Forward Current

I _SD

di/dt

( DUT )

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_SD

V_DS

( DUT )

V_DD

Body Diode

Forward Voltage Drop

Rev. B, November 2001

1...3 4 567 8 9

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型号	品牌	获取价格	描述	数据表
SSU1N60B	FAIRCHILD	获取价格	600V N-Channel MOSFET
SSU1N60BTU	ROCHESTER	获取价格	0.9A, 600V, 12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3
SSU1N60BTU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 0.9A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Meta
SSU1N60BTU-WS	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SSU2955	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 12A I(D) \| TO-251AA
SSU2N55	SAMSUNG	获取价格	Power Field-Effect Transistor, 2A I(D), 550V, 5ohm, 1-Element, N-Channel, Silicon, Metal-o
SSU2N60	SAMSUNG	获取价格	Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-o
SSU2N60A	FAIRCHILD	获取价格	Advanced Power MOSFET
SSU2N60ATU	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SSU2N60B	FAIRCHILD	获取价格	600V N-Channel MOSFET