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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| SSTJ211-T1 | VISHAY |
获取价格 |
Transistor |
|
| SSTJ211-T1-E3 | VISHAY |
获取价格 |
Transistor |
|
| SSTJ211T-E3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236, |
|
| SSTJ211TT1-E3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236A |
|
| SSTJ211TT2 | TEMIC |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236, |
|
| SSTJ211TT2 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236A |
|
| SSTJ211TT2-E3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236A |
|
| SSTJ212 | CALOGIC |
获取价格 |
N-Channel JFET |
|
| SSTJ212-E3 | VISHAY |
获取价格 |
Transistor |
|
| SSTJ212-T1 | VISHAY |
获取价格 |
Transistor |
|
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
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