生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
Is Samacsys: | N | FET 技术: | JUNCTION |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.5 W | 子类别: | FET General Purpose Small Signal |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SST5198NL-T1 | VISHAY |
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Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, SOIC-8 | |
SST5198NL-T1-E3 | VISHAY |
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Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, LEAD FR | |
SST5199NL | VISHAY |
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Monolithic N-Channel JFET Duals | |
SST5199NL-T1 | VISHAY |
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Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, SOIC-8 | |
SST5199NL-T1-E3 | VISHAY |
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Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, LEAD FR | |
SST5210 | ETC |
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TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SOT-23 | |
SST5210T117 | ROHM |
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Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | |
SST5424 | ETC |
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TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 50MA I(C) | SOT-23 | |
SST5424T116 | ROHM |
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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili | |
SST5424T117 | ROHM |
获取价格 |
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili |