生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.84 | 最大集电极电流 (IC): | 0.05 A |
基于收集器的最大容量: | 1.2 pF | 集电极-发射极最大电压: | 20 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 60 |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 最小功率增益 (Gp): | 15 dB |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 600 MHz | VCEsat-Max: | 0.4 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SST5460 | VISHAY |
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P-Channel JFETs | |
SST5460-E3 | VISHAY |
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Small Signal Field-Effect Transistor, P-Channel, Junction FET | |
SST5460T | VISHAY |
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暂无描述 | |
SST5460T | TEMIC |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236, | |
SST5460T1 | CALOGIC |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET | |
SST5460T2 | CALOGIC |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET | |
SST5460TT1 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236A | |
SST5460TT1 | TEMIC |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236, | |
SST5460TT2 | TEMIC |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236, | |
SST5460TT2-E3 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236A |