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SST5424T216 PDF预览

SST5424T216

更新时间: 2024-10-27 15:52:59
品牌 Logo 应用领域
罗姆 - ROHM 放大器光电二极管晶体管
页数 文件大小 规格书
6页 206K
描述
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MINIMOLD, SST, 3 PIN

SST5424T216 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.84最大集电极电流 (IC):0.05 A
基于收集器的最大容量:1.2 pF集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):60
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN最小功率增益 (Gp):15 dB
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):600 MHzVCEsat-Max:0.4 V
Base Number Matches:1

SST5424T216 数据手册

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