生命周期: | Transferred | Reach Compliance Code: | unknown |
风险等级: | 5.67 | 其他特性: | ULTRA HIGH INPUT IMPEDANCE, LOW NOISE |
配置: | SINGLE | FET 技术: | JUNCTION |
JEDEC-95代码: | TO-236 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SST5461TT2-E3 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236A | |
SST5462 | VISHAY |
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P-Channel JFETs | |
SST5462-E3 | VISHAY |
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Small Signal Field-Effect Transistor, P-Channel, Junction FET | |
SST5462T | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236, | |
SST5462T | TEMIC |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236, | |
SST5462T1 | CALOGIC |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET | |
SST5462TT1 | TEMIC |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236, | |
SST5462TT1 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236A | |
SST5462TT1-E3 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236A | |
SST5462TT2 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236, |