生命周期: | Obsolete | 包装说明: | TO-236, 3 PIN |
Reach Compliance Code: | unknown | 风险等级: | 5.76 |
Is Samacsys: | N | 配置: | SINGLE |
最小漏源击穿电压: | 25 V | FET 技术: | JUNCTION |
最大反馈电容 (Crss): | 5 pF | JEDEC-95代码: | TO-236 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SST5484-E3 | VISHAY |
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TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, TO-236, 3 PIN, FET RF | |
SST5484T | VISHAY |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
SST5484T1 | CALOGIC |
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RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET | |
SST5484T2 | CALOGIC |
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RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET | |
SST5484TT1 | TEMIC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
SST5484TT2 | TEMIC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
SST5485 | VISHAY |
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N-Channel JFETs | |
SST5485 | TEMIC |
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RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-2 | |
SST5485-E3 | VISHAY |
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TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, TO-236, 3 PIN, FET RF | |
SST5485T | VISHAY |
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暂无描述 |