生命周期: | Transferred | Reach Compliance Code: | unknown |
风险等级: | 5.67 | Is Samacsys: | N |
其他特性: | ULTRA HIGH INPUT IMPEDANCE, LOW NOISE | 配置: | SINGLE |
FET 技术: | JUNCTION | JEDEC-95代码: | TO-236 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | P-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SST5460TT2 | TEMIC |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236, | |
SST5460TT2-E3 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236A | |
SST5461 | VISHAY |
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P-Channel JFETs | |
SST5461-E3 | VISHAY |
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Small Signal Field-Effect Transistor, P-Channel, Junction FET | |
SST5461T | TEMIC |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236, | |
SST5461T2 | CALOGIC |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET | |
SST5461TT1 | TEMIC |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236, | |
SST5461TT1 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236A | |
SST5461TT1-E3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236A | |
SST5461TT2 | TEMIC |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236, |