Datasheet > SST39VF040-70-4I-WH

SST39VF040-70-4I-WH

更新时间： 2024-11-25 23:06:27

品牌	Logo	应用领域
SST		闪存内存集成电路光电二极管
页数	文件大小	规格书
24页	283K
描述
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040

SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040

SST39LF/VF512 / 010 / 020 / 0403.0 & 2.7V 512Kb / 1Mb / 2Mb / 4Mb (x8) MPF memories

Data Sheet

FEATURES:

•

Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8

Single Voltage Read and Write Operations

•

Fast Erase and Byte-Program:

– Sector-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 µs (typical)

– Chip Rewrite Time:

– 3.0-3.6V for SST39LF512/010/020/040

– 2.7-3.6V for SST39VF512/010/020/040

•

Superior Reliability

1 second (typical) for SST39LF/VF512

2 seconds (typical) for SST39LF/VF010

4 seconds (typical) for SST39LF/VF020

8 seconds (typical) for SST39LF/VF040

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

Low Power Consumption:

•

Automatic Write Timing

– Internal V_PPGeneration

End-of-Write Detection

– Active Current: 10 mA (typical)

– Standby Current: 1 µA (typical)

•

Sector-Erase Capability

– Uniform 4 KByte sectors

Fast Read Access Time:

– Toggle Bit

– Data# Polling

•

CMOS I/O Compatibility

JEDEC Standard

– 45 ns for SST39LF512/010/020/040

– 55 ns for SST39LF020/040

– 70 and 90 ns for SST39VF512/010/020/040

– Flash EEPROM Pinouts and command sets

Packages Available

•

Latched Address and Data

•

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

– 48-ball TFBGA (6mm x 8mm) for 1 Mbit

PRODUCT DESCRIPTION

The SST39LF512/010/020/040 and SST39VF512/010/

020/040 are 64K x8, 128K x8, 256K x8 and 5124K x8

CMOS Multi-Purpose Flash (MPF) manufactured with

SST’s proprietary, high performance CMOS SuperFlash

technology. The split-gate cell design and thick oxide tun-

neling injector attain better reliability and manufacturability

compared with alternate approaches. The SST39LF512/

010/020/040 devices write (Program or Erase) with a 3.0-

3.6V power supply. The SST39VF512/010/020/040

devices write with a 2.7-3.6V power supply. The devices

conform to JEDEC standard pinouts for x8 memories.

significantly improves performance and reliability, while low-

ering power consumption. They inherently use less energy

during Erase and Program than alternative flash technolo-

gies. The total energy consumed is a function of the

applied voltage, current, and time of application. Since for

any given voltage range, the SuperFlash technology uses

less current to program and has a shorter erase time, the

total energy consumed during any Erase or Program oper-

ation is less than alternative flash technologies. These

devices also improve flexibility while lowering the cost for

program, data, and configuration storage applications.

Featuring high performance Byte-Program, the

SST39LF512/010/020/040 and SST39VF512/010/020/

040 devices provide a maximum Byte-Program time of 20

µsec. These devices use Toggle Bit or Data# Polling to indi-

cate the completion of Program operation. To protect

against inadvertent write, they have on-chip hardware and

Software Data Protection schemes. Designed, manufac-

tured, and tested for a wide spectrum of applications, they

are offered with a guaranteed endurance of 10,000 cycles.

Data retention is rated at greater than 100 years.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose Erase

and Program times increase with accumulated Erase/Pro-

gram cycles.

To meet surface mount requirements, the SST39LF512/

010/020/040 and SST39VF512/010/020/040 devices are

offered in 32-lead PLCC and 32-lead TSOP packages. The

39LF/VF010 is also offered in a 48-ball TFBGA package.

See Figures 1 and 2 for pinouts.

The SST39LF512/010/020/040 and SST39VF512/010/

020/040 devices are suited for applications that require

convenient and economical updating of program, configu-

ration, or data memory. For all system applications, they

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

MPF is a trademark of Silicon Storage Technology, Inc.

S71150-03-000 6/01

395

These specifications are subject to change without notice.

12 3 4 5 6 7...24

中文翻译

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SST39VF040-70-4I-WH 替代型号

型号	品牌	替代类型	描述	数据表
SST39VF040-70-4C-WHE	MICROCHIP	功能相似	512K X 8 FLASH 2.7V PROM, 70 ns, PDSO32, 8 X 14 MM, ROHS COMPLIANT, MO-142BA, TSOP1-32

与SST39VF040-70-4I-WH相关器件

型号	品牌	获取价格	描述	数据表
SST39VF040-70-4I-WHE	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39VF040-70-4I-WK	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39VF040-75-4C-B3KE	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39VF040-75-4C-B3ME	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39VF040-75-4C-MKE	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39VF040-75-4C-MME	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39VF040-75-4C-NKE	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39VF040-75-4C-NME	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39VF040-75-4C-WKE	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39VF040-75-4C-WME	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

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