512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
SST39LF/VF512 / 010 / 020 / 0403.0 & 2.7V 512Kb / 1Mb / 2Mb / 4Mb (x8) MPF memories
Data Sheet
FEATURES:
•
•
Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8
Single Voltage Read and Write Operations
– 3.0-3.6V for SST39LF512/010/020/040
– 2.7-3.6V for SST39VF512/010/020/040
Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
Low Power Consumption
(typical values at 14 MHz)
– Active Current: 5 mA (typical)
– Standby Current: 1 µA (typical)
Sector-Erase Capability
– Uniform 4 KByte sectors
Fast Read Access Time:
•
Fast Erase and Byte-Program:
– Sector-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 µs (typical)
– Chip Rewrite Time:
•
•
1 second (typical) for SST39LF/VF512
2 seconds (typical) for SST39LF/VF010
4 seconds (typical) for SST39LF/VF020
8 seconds (typical) for SST39LF/VF040
•
•
Automatic Write Timing
– Internal VPP Generation
End-of-Write Detection
– Toggle Bit
– Data# Polling
CMOS I/O Compatibility
JEDEC Standard
– Flash EEPROM Pinouts and command sets
Packages Available
•
•
•
•
– 45 ns for SST39LF512/010/020/040
– 55 ns for SST39LF020/040
– 70 and 90 ns for SST39VF512/010/020/040
•
•
Latched Address and Data
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm)
– 48-ball TFBGA (6mm x 8mm)
– 34-ball WFBGA (4mm x 6mm) for 1M and 2M
•
All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST39LF512/010/020/040 and SST39VF512/010/
020/040 are 64K x8, 128K x8, 256K x8 and 5124K x8
CMOS Multi-Purpose Flash (MPF) manufactured with
SST’s proprietary, high performance CMOS SuperFlash
technology. The split-gate cell design and thick-oxide tun-
neling injector attain better reliability and manufacturability
compared with alternate approaches. The SST39LF512/
010/020/040 devices write (Program or Erase) with a 3.0-
3.6V power supply. The SST39VF512/010/020/040
devices write with a 2.7-3.6V power supply. The devices
conform to JEDEC standard pinouts for x8 memories.
significantly improves performance and reliability, while low-
ering power consumption. They inherently use less energy
during Erase and Program than alternative flash technolo-
gies. The total energy consumed is a function of the
applied voltage, current, and time of application. Since for
any given voltage range, the SuperFlash technology uses
less current to program and has a shorter erase time, the
total energy consumed during any Erase or Program oper-
ation is less than alternative flash technologies. These
devices also improve flexibility while lowering the cost for
program, data, and configuration storage applications.
Featuring high performance Byte-Program, the
SST39LF512/010/020/040 and SST39VF512/010/020/
040 devices provide a maximum Byte-Program time of 20
µsec. These devices use Toggle Bit or Data# Polling to indi-
cate the completion of Program operation. To protect
against inadvertent write, they have on-chip hardware and
Software Data Protection schemes. Designed, manufac-
tured, and tested for a wide spectrum of applications, they
are offered with a guaranteed typical endurance of 10,000
cycles. Data retention is rated at greater than 100 years.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet surface mount requirements, the SST39LF512/
010/020/040 and SST39VF512/010/020/040 devices are
offered in 32-lead PLCC and 32-lead TSOP packages. The
SST39LF/VF010 and SST39LF/VF020 are also offered in
a 48-ball TFBGA package. See Figures 1, 2, 3, and 4 for
pin assignments.
The SST39LF512/010/020/040 and SST39VF512/010/
020/040 devices are suited for applications that require
convenient and economical updating of program, configu-
ration, or data memory. For all system applications, they
©2005 Silicon Storage Technology, Inc.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
S71150-09-000
1
1/06
These specifications are subject to change without notice.
5秒后页面跳转
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
