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SST39VF040-90-4C-VL PDF预览

SST39VF040-90-4C-VL

更新时间: 2024-11-24 03:00:47
品牌 Logo 应用领域
美国微芯 - MICROCHIP /
页数 文件大小 规格书
28页 255K
描述
Flash, 512KX8, 90ns

SST39VF040-90-4C-VL 数据手册

 浏览型号SST39VF040-90-4C-VL的Datasheet PDF文件第2页浏览型号SST39VF040-90-4C-VL的Datasheet PDF文件第3页浏览型号SST39VF040-90-4C-VL的Datasheet PDF文件第4页浏览型号SST39VF040-90-4C-VL的Datasheet PDF文件第5页浏览型号SST39VF040-90-4C-VL的Datasheet PDF文件第6页浏览型号SST39VF040-90-4C-VL的Datasheet PDF文件第7页 
1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash  
SST39LF010 / SST39LF020 / SST39LF040  
SST39VF010 / SST39VF020 / SST39VF040  
Data Sheet  
The SST39LF010, SST39LF020, SST39LF040 and SST39VF010, SST39VF020,  
SST39VF040 are 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash  
(MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash  
technology. The split-gate cell design and thick-oxide tunneling injector attain bet-  
ter reliability and manufacturability compared with alternate approaches. The  
SST39LF010/020/040 devices write (Program or Erase) with a 3.0-3.6V power  
supply. The SST39VF010/020/040 devices write with a 2.7-3.6V power supply.  
The devices conform to JEDEC standard pinouts for x8 memories.  
Features  
• Organized as 128K x8 / 256K x8 / 512K x8  
• Fast Erase and Byte-Program:  
– Sector-Erase Time: 18 ms (typical)  
– Chip-Erase Time: 70 ms (typical)  
– Byte-Program Time: 14 µs (typical)  
– Chip Rewrite Time:  
2 seconds (typical) for SST39LF/VF010  
4 seconds (typical) for SST39LF/VF020  
8 seconds (typical) for SST39LF/VF040  
• Single Voltage Read and Write Operations  
– 3.0-3.6V for SST39LF010/020/040  
– 2.7-3.6V for SST39VF010/020/040  
• Superior Reliability  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
• Automatic Write Timing  
• Low Power Consumption  
(typical values at 14 MHz)  
– Internal VPP Generation  
– Active Current: 5 mA (typical)  
– Standby Current: 1 µA (typical)  
• End-of-Write Detection  
Toggle Bit  
– Data# Polling  
• Sector-Erase Capability  
– Uniform 4 KByte sectors  
• CMOS I/O Compatibility  
• Fast Read Access Time:  
• JEDEC Standard  
– 55 ns for SST39LF010/020/040  
– 70 ns for SST39VF010/020/040  
– Flash EEPROM Pinouts and command sets  
• Packages Available  
• Latched Address and Data  
– 32-lead PLCC  
– 32-lead TSOP (8mm x 14mm)  
• All devices are RoHS compliant  
www.microchip.com  
©2012 Silicon Storage Technology, Inc.  
DS25023B  
06/13  

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