8 Mbit / 16 Mbit (x8) Multi-Purpose Flash
SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016
SST39LF/VF080 / 0163.0 & 2.7V 8Mb / 16Mb (x8) MPF memories
Data Sheet
FEATURES:
•
•
Organized as 1M x8 / 2M x8
•
Fast Erase and Byte-Program:
Single Voltage Read and Write Operations
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 µs (typical)
– Chip Rewrite Time:
– 3.0-3.6V for SST39LF080/016
– 2.7-3.6V for SST39VF080/016
•
•
Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
15 seconds (typical) for SST39LF/VF080
30 seconds (typical) for SST39LF/VF016
Low Power Consumption:
•
•
Automatic Write Timing
– Internal VPP Generation
End-of-Write Detection
– Active Current: 15 mA (typical)
– Standby Current: 4 µA (typical)
– Auto Low Power Mode: 4 µA (typical)
– Toggle Bit
– Data# Polling
•
•
•
Sector-Erase Capability
– Uniform 4 KByte sectors
Block-Erase Capability
– Uniform 64 KByte blocks
Fast Read Access Time:
•
•
CMOS I/O Compatibility
JEDEC Standard
– Flash EEPROM Pinouts and command sets
Packages Available
•
– 55 ns for SST39LF080/016
– 70 and 90 ns for SST39VF080/016
– 40-lead TSOP (10mm x 20mm)
– 48-ball TFBGA (6mm x 8mm)
•
Latched Address and Data
PRODUCT DESCRIPTION
The SST39LF/VF080 and SST39LF/VF016 devices are
1M x8 / 2M x8 CMOS Multi-Purpose Flash (MPF) manu-
factured with SST’s proprietary, high performance CMOS
SuperFlash technology. The split-gate cell design and thick
oxide tunneling injector attain better reliability and manufac-
turability compared with alternate approaches. The
SST39LF080/016 write (Program or Erase) with a 3.0-3.6V
power supply. The SST39VF080/016 write (Program or
Erase) with a 2.7-3.6V power supply. They conform to
JEDEC standard pinouts for x8 memories.
They inherently use less energy during Erase and Program
than alternative flash technologies. The total energy con-
sumed is a function of the applied voltage, current, and
time of application. Since for any given voltage range, the
SuperFlash technology uses less current to program and
has a shorter erase time, the total energy consumed during
any Erase or Program operation is less than alternative
flash technologies. They also improve flexibility while lower-
ing the cost for program, data, and configuration storage
applications.
Featuring high performance Byte-Program, the SST39LF/
VF080 and SST39LF/VF016 devices provide a typical
Byte-Program time of 14 µsec. The devices use Toggle Bit
or Data# Polling to indicate the completion of Program
operation. To protect against inadvertent write, they have
on-chip hardware and Software Data Protection schemes.
Designed, manufactured, and tested for a wide spectrum of
applications, these devices are offered with a guaranteed
endurance of 10,000 cycles. Data retention is rated at
greater than 100 years.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet high density, surface mount requirements, the
SST39LF/VF080 and SST39LF/VF016 are offered in 40-
lead TSOP and 48-ball TFBGA packaging. See Figures 1
and 2 for pinouts.
The SST39LF/VF080 and SST39LF/VF016 devices are
suited for applications that require convenient and econom-
ical updating of program, configuration, or data memory.
For all system applications, they significantly improve per-
formance and reliability, while lowering power consumption.
©2001 Silicon Storage Technology, Inc.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
S71146-03-000 6/01
1
396
These specifications are subject to change without notice.
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