8 Mbit / 16 Mbit (x8) Multi-Purpose Flash
SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016
Data Sheet
FEATURES:
•
•
Organized as 1M x8 / 2M x8
•
Fast Erase and Byte-Program:
1
-
-
-
-
-
Sector-Erase Time: 18 ms (typical)
Block-Erase Time: 18 ms (typical)
Chip-Erase Time: 70 ms (typical)
Byte-Program Time: 14 µs (typical)
Chip Rewrite Time:
15 seconds (typical) for SST39LF/VF080
30 seconds (typical) for SST39LF/VF016
Single Voltage Read and Write Operations
-
-
3.0-3.6V for SST39LF080/016
2.7-3.6V for SST39VF080/016
2
•
•
Superior Reliability
-
-
Endurance: 100,000 Cycles (typical)
Greater than 100 years Data Retention
3
Low Power Consumption:
•
•
Automatic Write Timing
Internal VPP Generation
End-of-Write Detection
-
-
-
Active Current: 15 mA (typical)
Standby Current: 4 µA (typical)
Auto Low Power Mode: 4 µA (typical)
-
4
-
-
Toggle Bit
Data# Polling
•
•
•
Sector-Erase Capability
Uniform 4 KByte sectors
Block-Erase Capability
Uniform 64 KByte blocks
Fast Read Access Time:
-
•
•
CMOS I/O Compatibility
5
JEDEC Standard
-
-
Flash EEPROM Pinouts and command sets
6
•
Packages Available
-
-
55 ns for SST39LF080/016
70 and 90 ns for SST39VF080/016
-
-
40-Pin TSOP (10mm x 20mm)
48-Ball TFBGA (6mm x 8mm)
7
•
Latched Address and Data
PRODUCT DESCRIPTION
Erase and Program than alternative flash technologies.
The total energy consumed is a function of the applied
voltage, current, and time of application. Since for any
givenvoltagerange,theSuperFlashtechnologyusesless
current to program and has a shorter erase time, the total
energyconsumedduringanyEraseorProgramoperation
is less than alternative flash technologies. They also
improveflexibilitywhileloweringthecostforprogram,data,
and configuration storage applications.
8
TheSST39LF/VF080andSST39LF/VF016devicesare
1M x8 / 2M x8 CMOS Multi-Purpose Flash (MPF)
manufacturedwithSST’sproprietary,highperformance
CMOS SuperFlash technology. The split-gate cell de-
sign and thick oxide tunneling injector attain better
reliabilityandmanufacturabilitycomparedwithalternate
approaches. The SST39LF080/016 write (Program or
Erase) with a 3.0-3.6V power supply. The
SST39VF080/016 write (Program or Erase) with a 2.7-
3.6V power supply. They conform to JEDEC standard
pinouts for x8 memories.
9
10
11
12
13
14
15
16
The SuperFlash technology provides fixed Erase and
Program times, independent of the number of Erase/
Program cycles that have occurred. Therefore the sys-
tem software or hardware does not have to be modified
or de-rated as is necessary with alternative flash tech-
nologies, whose Erase and Program times increase
with accumulated Erase/Program cycles.
Featuring high performance Byte-Program, the
SST39LF/VF080andSST39LF/VF016devicesprovide
atypicalByte-Programtimeof14µsec.Thedevicesuse
Toggle Bit or Data# Polling to indicate the completion of
Programoperation.Toprotectagainstinadvertentwrite,
they have on-chip hardware and Software Data Protec-
tion schemes. Designed, manufactured, and tested for
a wide spectrum of applications, these devices are
offered with a guaranteed endurance of 10,000 cycles.
Data retention is rated at greater than 100 years.
To meet high density, surface mount requirements, the
SST39LF/VF080 and SST39LF/VF016 are offered in
40-pin TSOP and 48-ball TFBGA packaging. See
Figures 1 and 2 for pinouts.
Device Operation
Commands are used to initiate the memory operation
functions of the device. Commands are written to the
device using standard microprocessor write se-
quences. A command is written by asserting WE# low
while keeping CE# low. The address bus is latched on
the falling edge of WE# or CE#, whichever occurs last.
The data bus is latched on the rising edge of WE# or
CE#, whichever occurs first.
The SST39LF/VF080 and SST39LF/VF016 devices are
suited for applications that require convenient and eco-
nomical updating of program, configuration, or data
memory. For all system applications, they significantly
improve performance and reliability, while lowering power
consumption. They inherently use less energy during
© 2000 Silicon Storage Technology, Inc.The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MPF is a trademark of Silicon Storage Technology, Inc.
396-2 11/00 S71146 These specifications are subject to change without notice.
1
5秒后页面跳转
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
