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SST39VF088_07 PDF预览

SST39VF088_07

更新时间: 2024-11-04 05:16:43
品牌 Logo 应用领域
SST 闪存
页数 文件大小 规格书
22页 374K
描述
8 Mbit (x8) Multi-Purpose Flash

SST39VF088_07 数据手册

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8 Mbit (x8) Multi-Purpose Flash  
SST39VF088  
EOL Data Sheet  
FEATURES:  
Organized as 1M x8  
Single Voltage Read and Write Operations  
– 2.7-3.6V  
Fast Erase and Byte-Program  
– Sector-Erase Time: 18 ms (typical)  
– Block-Erase Time: 18 ms (typical)  
– Chip-Erase Time: 70 ms (typical)  
– Byte-Program Time: 14 µs (typical)  
– Chip Rewrite Time: 15 seconds (typical)  
Superior Reliability  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
Automatic Write Timing  
– Internal VPP Generation  
End-of-Write Detection  
Toggle Bit  
– Data# Polling  
CMOS I/O Compatibility  
JEDEC Standard  
– Flash EEPROM Pinouts and command sets  
Packages Available  
– 48-lead TSOP (12mm x 20mm)  
Low Power Consumption (typical values at 5 MHz)  
– Active Current: 12 mA (typical)  
– Standby Current: 4 µA (typical)  
Sector-Erase Capability  
– Uniform 4 KByte sectors  
Block-Erase Capability  
– Uniform 64 KByte blocks  
Fast Read Access Time:  
– 70 and 90 ns  
Latched Address and Data  
PRODUCT DESCRIPTION  
The SST39VF088 device is a 1M x8 CMOS Multi-Purpose  
Flash (MPF) manufactured with SST’s proprietary, high  
performance CMOS SuperFlash technology. The split-gate  
cell design and thick-oxide tunneling injector attain better  
reliability and manufacturability compared with alternate  
approaches. The SST39VF088 writes (Program or Erase)  
with a 2.7-3.6V power supply. It conforms to JEDEC stan-  
dard pinouts for x8 memories.  
for any given voltage range, the SuperFlash technology  
uses less current to program and has a shorter erase time,  
the total energy consumed during any Erase or Program  
operation is less than alternative flash technologies. They  
also improve flexibility while lowering the cost for program,  
data, and configuration storage applications.  
The SuperFlash technology provides fixed Erase and Pro-  
gram times, independent of the number of Erase/Program  
cycles that have occurred. Therefore the system software  
or hardware does not have to be modified or de-rated as is  
necessary with alternative flash technologies, whose Erase  
and Program times increase with accumulated Erase/Pro-  
gram cycles.  
Featuring high performance Byte-Program, the  
SST39VF088 device provides a typical Byte-Program time  
of 14 µsec. The devices use Toggle Bit or Data# Polling to  
indicate the completion of Program operation. To protect  
against inadvertent write, they have on-chip hardware and  
Software Data Protection schemes. Designed, manufac-  
tured, and tested for a wide spectrum of applications, these  
devices are offered with a guaranteed endurance of 10,000  
cycles. Data retention is rated at greater than 100 years.  
To meet high density, surface mount requirements, the  
SST39VF088 is offered in 48-lead TSOP packaging. See  
Figure 1 for pin assignments.  
The SST39VF088 device is suited for applications that  
require convenient and economical updating of program,  
configuration, or data memory. For all system applications,  
they significantly improve performance and reliability, while  
lowering power consumption. They inherently use less  
energy during Erase and Program than alternative flash  
technologies. The total energy consumed is a function of  
the applied voltage, current, and time of application. Since  
©2007 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.  
MPF is a trademark of Silicon Storage Technology, Inc.  
S71227-05-EOL  
1
2/07  
These specifications are subject to change without notice.  

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