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SST39VF100-70-4C-B3KE PDF预览

SST39VF100-70-4C-B3KE

更新时间： 2024-11-26 15:52:55
品牌 Logo 应用领域
芯科 - SILICON 内存集成电路
页数 文件大小 规格书
22页 691K
描述
Flash, 64KX16, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, LEAD FREE, MO-210AB-1, TFBGA-48

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SST39VF100-70-4C-B3KE 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：BGA包装说明：TFBGA, BGA48,6X8,32
针数：48Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.84最长访问时间：70 ns
命令用户界面：YES数据轮询：YES
JESD-30 代码：R-PBGA-B48长度：8 mm
内存密度：1048576 bit内存集成电路类型：FLASH
内存宽度：16功能数量：1
部门数/规模：32端子数量：48
字数：65536 words字数代码：64000
工作模式：ASYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：64KX16
封装主体材料：PLASTIC/EPOXY封装代码：TFBGA
封装等效代码：BGA48,6X8,32封装形状：RECTANGULAR
封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行：PARALLEL
电源：3/3.3 V编程电压：2.7 V
认证状态：Not Qualified座面最大高度：1.2 mm
部门规模：2K最大待机电流：0.00002 A
子类别：Flash Memories最大压摆率：0.03 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子形式：BALL端子节距：0.8 mm
端子位置：BOTTOM切换位：YES
类型：NOR TYPE宽度：6 mm
Base Number Matches：1

SST39VF100-70-4C-B3KE 数据手册

 浏览型号SST39VF100-70-4C-B3KE的Datasheet PDF文件第2页浏览型号SST39VF100-70-4C-B3KE的Datasheet PDF文件第3页浏览型号SST39VF100-70-4C-B3KE的Datasheet PDF文件第4页浏览型号SST39VF100-70-4C-B3KE的Datasheet PDF文件第5页浏览型号SST39VF100-70-4C-B3KE的Datasheet PDF文件第6页浏览型号SST39VF100-70-4C-B3KE的Datasheet PDF文件第7页 
1 Mbit (64K x16) Multi-Purpose Flash  
SST39LF100 / SST39VF100  
SST39LF/VF1003.0 & 2.7V 1Mb (x16) MPF memories  
Data Sheet  
FEATURES:  
•
•
Organized as 64K x16  
Single Voltage Read and Write Operations  
– 3.0-3.6V for SST39LF100  
– 2.7-3.6V for SST39VF100  
Superior Reliability  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
Low Power Consumption  
– Active Current: 20 mA (typical)  
– Standby Current: 3 µA (typical)  
•
Fast Erase and Word-Program  
– Sector-Erase Time: 18 ms (typical)  
– Chip-Erase Time: 70 ms (typical)  
– Word-Program Time: 14 µs (typical)  
– Chip Rewrite Time: 1 second (typical)  
•
•
•
•
Automatic Write Timing  
– Internal VPP Generation  
End-of-Write Detection  
– Toggle Bit  
– Data# Polling  
•
•
•
CMOS I/O Compatibility  
JEDEC Standard Command Sets  
Packages Available  
•
•
Sector-Erase Capability  
– Uniform 2 KWord sectors  
Fast Read Access Time  
– 40-lead TSOP (10mm x 14mm)  
– 48-ball TFBGA (6mm x 8mm)  
– 45 ns for SST39LF100  
– 70 ns for SST39VF100  
•
Latched Address and Data  
PRODUCT DESCRIPTION  
The SST39LF/VF100 devices are 64K x16 CMOS Multi-  
Purpose Flash (MPF) manufactured with SST’s proprietary,  
high performance CMOS SuperFlash technology. The  
split-gate cell design and thick oxide tunneling injector  
attain better reliability and manufacturability compared with  
alternate approaches. The SST39LF/VF100 write (Pro-  
gram or Erase) with a single voltage power supply of 3.0-  
3.6V and 2.7-3.6V, respectively.  
performance and reliability, while lowering power consump-  
tion. The SST39LF/VF100 inherently use less energy dur-  
ing Erase and Program than alternative flash technologies.  
The total energy consumed is a function of the applied volt-  
age, current, and time of application. Since for any given  
voltage range, the SuperFlash technology uses less cur-  
rent to program and has a shorter erase time, the total  
energy consumed during any Erase or Program operation  
is less than alternative flash technologies. The SST39LF/  
VF100 also improve flexibility while lowering the cost for  
program, data, and configuration storage applications.  
Featuring high performance Word-Program, the  
SST39LF/VF100 devices provide a typical Word-Program  
time of 14 µsec. The devices use Toggle Bit or Data# Poll-  
ing to detect the completion of the Program or Erase oper-  
ation. To protect against inadvertent write, the SST39LF/  
VF100 have on-chip hardware and software data protec-  
tion schemes. Designed, manufactured, and tested for a  
wide spectrum of applications, the SST39LF/VF100 are  
offered with a guaranteed endurance of 10,000 cycles.  
Data retention is rated at greater than 100 years.  
The SuperFlash technology provides fixed Erase and Pro-  
gram times, independent of the number of Erase/Program  
cycles that have occurred. Therefore the system software  
or hardware does not have to be modified or de-rated as is  
necessary with alternative flash technologies, whose Erase  
and Program times increase with accumulated Erase/Pro-  
gram cycles.  
The SST39LF/VF100 devices are suited for applications  
that require convenient and economical updating of pro-  
gram, configuration, or data memory. For all system appli-  
cations, the SST39LF/VF100 significantly improve  
To meet surface mount requirements, the SST39LF/VF100  
are offered in 40-lead TSOP and 48-ball TFBGA packages.  
See Figure 1 for pinout.  
©2002 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.  
Multi-Purpose Flash and MPF are trademarks of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71129-02-000 2/02  
1
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SST39VF100-70-4C-WI SST

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SST39VF100-70-4C-WK SST

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 		1 Mbit (64K x16) Multi-Purpose Flash
SST39VF100-70-4I-B3I SST

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 		1 Mbit (64K x16) Multi-Purpose Flash
SST39VF100-70-4I-B3K SST

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 		1 Mbit (64K x16) Multi-Purpose Flash
SST39VF100-70-4I-B3KE SILICON

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 		Flash, 64KX16, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, LEAD FREE, MO-210AB-1, TFBGA-48
SST39VF100-70-4I-WI SST

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 		1 Mbit (64K x16) Multi-Purpose Flash
SST39VF100-70-4I-WK SST

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 		1 Mbit (64K x16) Multi-Purpose Flash
SST39VF160 SST

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 		16 Megabit (1M x 16-Bit) Multi-Purpose Flash
SST39VF1601 SST

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 		16 Mbit / 32 Mbit / 64 Mbit (x16) Multi-Purpose Flash Plus
SST39VF1601 MICROCHIP

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 		*Not Recommended for New Design* The SST39VF1601 device is 1M x16 and 2M x16, respectivel

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