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SST39VF080-90-4C-B3KE PDF预览

SST39VF080-90-4C-B3KE

更新时间: 2024-11-04 05:16:43
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描述
8 Mbit (x8) Multi-Purpose Flash

SST39VF080-90-4C-B3KE 数据手册

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8 Mbit (x8) Multi-Purpose Flash  
SST39LF080 / SST39VF080  
SST39LF/VF0803.0 & 2.7V 8Mb (x8) MPF memories  
EOL Data Sheet  
FEATURES:  
Organized as 1M x8  
Single Voltage Read and Write Operations  
Latched Address and Data  
Fast Erase and Byte-Program:  
– 3.0-3.6V for SST39LF080  
– 2.7-3.6V for SST39VF080  
Superior Reliability  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
Low Power Consumption  
(typical values at 14 MHz)  
– Sector-Erase Time: 18 ms (typical)  
– Block-Erase Time: 18 ms (typical)  
– Chip-Erase Time: 70 ms (typical)  
– Byte-Program Time: 14 µs (typical)  
– Chip Rewrite Time:  
15 seconds (typical) for SST39LF/VF080  
Automatic Write Timing  
– Internal VPP Generation  
End-of-Write Detection  
– Active Current: 12 mA (typical)  
– Standby Current: 4 µA (typical)  
– Auto Low Power Mode: 4 µA (typical)  
Toggle Bit  
– Data# Polling  
CMOS I/O Compatibility  
JEDEC Standard  
– Flash EEPROM Pinouts and command sets  
Packages Available  
Sector-Erase Capability  
– Uniform 4 KByte sectors  
Block-Erase Capability  
– Uniform 64 KByte blocks  
Fast Read Access Time:  
– 40-lead TSOP (10mm x 20mm)  
– 48-ball TFBGA (6mm x 8mm)  
– 55 ns for SST39LF080  
– 70 and 90 ns for SST39VF080  
PRODUCT DESCRIPTION  
The SST39LF/VF080 devices are 1M x8 CMOS Multi-Pur-  
pose Flash (MPF) manufactured with SST’s proprietary,  
high-performance CMOS SuperFlash technology. The  
split-gate cell design and thick-oxide tunneling injector  
attain better reliability and manufacturability compared with  
alternate approaches. The SST39LF080 write (Program or  
Erase) with a 3.0-3.6V power supply. The SST39VF080  
write (Program or Erase) with a 2.7-3.6V power supply.  
They conform to JEDEC standard pinouts for x8 memories.  
native flash technologies. The total energy consumed is a  
function of the applied voltage, current, and time of applica-  
tion. Since for any given voltage range, the SuperFlash  
technology uses less current to program and has a shorter  
erase time, the total energy consumed during any Erase or  
Program operation is less than alternative flash technolo-  
gies. They also improve flexibility while lowering the cost for  
program, data, and configuration storage applications.  
The SuperFlash technology provides fixed Erase and Pro-  
gram times, independent of the number of Erase/Program  
cycles that have occurred. Therefore the system software  
or hardware does not have to be modified or de-rated as is  
necessary with alternative flash technologies, whose Erase  
and Program times increase with accumulated Erase/Pro-  
gram cycles.  
Featuring high performance Byte-Program, the SST39LF/  
VF080 devices provide a typical Byte-Program time of 14  
µsec. The devices use Toggle Bit or Data# Polling to indi-  
cate the completion of Program operation. To protect  
against inadvertent write, they have on-chip hardware and  
Software Data Protection schemes. Designed, manufac-  
tured, and tested for a wide spectrum of applications,  
these devices are offered with a guaranteed typical  
endurance of 10,000 cycles. Data retention is rated at  
greater than 100 years.  
To meet high density, surface mount requirements, the  
SST39LF/VF080 are offered in 40-lead TSOP and 48-  
ball TFBGA packages. See Figures 1 and 2 for pin  
assignments.  
The SST39LF/VF080 devices are suited for applications  
that require convenient and economical updating of pro-  
gram, configuration, or data memory. For all system appli-  
cations, they significantly improve performance and  
reliability, while lowering power consumption. They inher-  
ently use less energy during Erase and Program than alter-  
©2007 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.  
MPF is a trademark of Silicon Storage Technology, Inc.  
S71146-07-EOL  
1
6/07  
These specifications are subject to change without notice.  

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