16 Megabit (1M x 16-Bit) Multi-Purpose Flash
SST39VF160Q / SST39VF160
Advance Information
FEATURES:
•
•
•
Organized as 1 M X 16
•
•
Latched Address and Data
Fast Sector Erase and Word Program:
1
Single 2.7V-only Read and Write Operations
-
-
-
-
-
Sector Erase Time: 3 ms typical
Block Erase Time: 7 ms typical
Chip Erase Time: 15 ms typical
Word Program time: 7 µs typical
Chip Rewrite Time: 7 seconds
V
DDQ Power Supply to Support 5V I/O
for SST39VF160Q
2
- VDDQ not available on SST39VF160
Superior Reliability
•
•
-
-
Endurance: 100,000 Cycles (typical)
Greater than 100 years Data Retention
3
•
•
Automatic Write Timing
- Internal Vpp Generation
End of Write Detection
Low Power Consumption:
4
-
-
-
Active Current: 15 mA (typical)
Standby Current: 3 µA (typical)
Auto Low Power Mode: 3 µA (typical)
-
-
Toggle Bit
Data# Polling
•
•
CMOS I/O Compatibility
•
•
•
Small Sector Erase Capability (512 sectors)
Uniform 2 KWord sectors
Block Erase Capability (32 blocks)
Uniform 32 KWord blocks
Fast Read Access Time:
70 and 90 ns
5
JEDEC Standard
-
-
EEPROM Pinouts and command set
6
•
Packages Available
-
-
-
48-Pin TSOP (12mm x 20mm)
6 x 8 Ball TFBGA
-
7
PRODUCT DESCRIPTION
alternative flash technologies. The total energy con-
sumed is a function of the applied voltage, current, and
timeofapplication.Sinceforanygivenvoltagerange,the
SuperFlashtechnologyuseslesscurrenttoprogramand
has a shorter erase time, the total energy consumed
during any Erase or Program operation is less than
alternative flash technologies. The SST39VF160Q/
VF160 also improve flexibility while lowering the cost for
program, data, and configuration storage applications.
The SST39VF160Q/VF160 devices are 1M x 16 CMOS
Multi-Purpose Flash (MPF) manufactured with SST’s
proprietary, high performance CMOS SuperFlash tech-
nology. The split-gate cell design and thick oxide tunnel-
ing injector attain better reliability and manufacturability
compared with alternate approaches. The
SST39VF160Q/VF160 write (Program or Erase) with a
2.7V-only power supply. The SST39VF160Q/VF160
conform to JEDEC standard pinouts for x16 memories.
8
9
10
11
12
13
14
15
16
The SuperFlash technology provides fixed Erase and
Programtimes,independentofthenumberofendurance
cycles that have occurred. Therefore the system
software or hardware does not have to be modified or
de-rated as is necessary with alternative flash technolo-
gies, whose erase and program times increase with
accumulated endurance cycles.
Featuring high performance word program, the
SST39VF160Q/VF160 devices provide a maximum
word-program time of 10 µsec. The entire memory can
typically be erased and programmed word by word in 7
seconds, when using interface features such as Toggle
BitorData#PollingtoindicatethecompletionofProgram
operation. To protect against inadvertent write, the
SST39VF160Q/VF160haveon-chiphardwareandsoft-
ware data protection schemes. Designed, manufac-
tured,andtestedforawidespectrumofapplications,the
SST39VF160Q/VF160 are offered with a guaranteed
endurance of 10,000 cycles. Data retention is rated at
greater than 100 years.
To meet high density, surface mount requirements, the
SST39VF160Q/VF160 are offered in 48-pin TSOP and
48-pin TFBGA packages. See Figures 1 and 2 for
pinouts.
Device Operation
Commands are used to initiate the memory operation
functions of the device. Commands are written to the
deviceusingstandardmicroprocessorwritesequences.
A command is written by asserting WE# low while
keeping CE# low. The address bus is latched on the
falling edge of WE# or CE#, whichever occurs last. The
data bus is latched on the rising edge of WE# or CE#,
whichever occurs first.
The SST39VF160Q/VF160 devices are suited for appli-
cationsthatrequireconvenientandeconomicalupdating
of program, configuration, or data memory. For all sys-
tem applications, the SST39VF160Q/VF160 signifi-
cantly improve performance and reliability, while lower-
ing power consumption. The SST39VF160Q/VF160 in-
herently use less energy during Ease and Program than
© 1998 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MPF is a trademark of Silicon storage Technology, Inc.
329-09 11/98 These specifications are subject to change without notice.
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