5秒后页面跳转
捷配首页

Datasheet > SST39VF040-90-4C-NHE
SST39VF040-90-4C-NHE PDF预览

SST39VF040-90-4C-NHE

更新时间： 2024-11-23 15:52:55
品牌 Logo 应用领域
芯科 - SILICON 内存集成电路
页数 文件大小 规格书
24页 716K
描述
Flash, 512KX8, 90ns, PQCC32, PLASTIC, MS-016AE, LCC-32

阅读下载

中文翻译

获取价格

SST39VF040-90-4C-NHE 技术参数

是否Rohs认证：符合生命周期：Transferred
零件包装代码：QFJ包装说明：PLASTIC, MS-016AE, LCC-32
针数：32Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.63Is Samacsys：N
最长访问时间：90 ns命令用户界面：YES
数据轮询：YESJESD-30 代码：R-PQCC-J32
JESD-609代码：e3长度：13.97 mm
内存密度：4194304 bit内存集成电路类型：FLASH
内存宽度：8功能数量：1
部门数/规模：128端子数量：32
字数：524288 words字数代码：512000
工作模式：ASYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：512KX8
封装主体材料：PLASTIC/EPOXY封装代码：QCCJ
封装等效代码：LDCC32,.5X.6封装形状：RECTANGULAR
封装形式：CHIP CARRIER并行/串行：PARALLEL
峰值回流温度（摄氏度）：260电源：3/3.3 V
编程电压：2.7 V认证状态：Not Qualified
座面最大高度：3.556 mm部门规模：4K
最大待机电流：0.000015 A子类别：Flash Memories
最大压摆率：0.02 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子面层：MATTE TIN
端子形式：J BEND端子节距：1.27 mm
端子位置：QUAD处于峰值回流温度下的最长时间：40
切换位：YES类型：NOR TYPE
宽度：11.43 mmBase Number Matches：1

SST39VF040-90-4C-NHE 数据手册

 浏览型号SST39VF040-90-4C-NHE的Datasheet PDF文件第2页浏览型号SST39VF040-90-4C-NHE的Datasheet PDF文件第3页浏览型号SST39VF040-90-4C-NHE的Datasheet PDF文件第4页浏览型号SST39VF040-90-4C-NHE的Datasheet PDF文件第5页浏览型号SST39VF040-90-4C-NHE的Datasheet PDF文件第6页浏览型号SST39VF040-90-4C-NHE的Datasheet PDF文件第7页 
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash  
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040  
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040  
SST39LF/VF512 / 010 / 020 / 0403.0 & 2.7V 512Kb / 1Mb / 2Mb / 4Mb (x8) MPF memories  
Data Sheet  
FEATURES:  
•
•
Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8  
Single Voltage Read and Write Operations  
– 3.0-3.6V for SST39LF512/010/020/040  
– 2.7-3.6V for SST39VF512/010/020/040  
Superior Reliability  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
•
Fast Erase and Byte-Program:  
– Sector-Erase Time: 18 ms (typical)  
– Chip-Erase Time: 70 ms (typical)  
– Byte-Program Time: 14 µs (typical)  
– Chip Rewrite Time:  
•
•
1 second (typical) for SST39LF/VF512  
2 seconds (typical) for SST39LF/VF010  
4 seconds (typical) for SST39LF/VF020  
8 seconds (typical) for SST39LF/VF040  
Low Power Consumption:  
•
•
Automatic Write Timing  
– Internal VPP Generation  
End-of-Write Detection  
– Toggle Bit  
– Data# Polling  
– Active Current: 10 mA (typical)  
– Standby Current: 1 µA (typical)  
•
•
Sector-Erase Capability  
– Uniform 4 KByte sectors  
Fast Read Access Time:  
•
•
CMOS I/O Compatibility  
JEDEC Standard  
– Flash EEPROM Pinouts and command sets  
Packages Available  
– 45 ns for SST39LF512/010/020/040  
– 55 ns for SST39LF020/040  
– 70 and 90 ns for SST39VF512/010/020/040  
•
Latched Address and Data  
•
– 32-lead PLCC  
– 32-lead TSOP (8mm x 14mm)  
– 48-ball TFBGA (6mm x 8mm) for 1 Mbit  
PRODUCT DESCRIPTION  
The SST39LF512/010/020/040 and SST39VF512/010/  
020/040 are 64K x8, 128K x8, 256K x8 and 5124K x8  
CMOS Multi-Purpose Flash (MPF) manufactured with  
SST’s proprietary, high performance CMOS SuperFlash  
technology. The split-gate cell design and thick oxide tun-  
neling injector attain better reliability and manufacturability  
compared with alternate approaches. The SST39LF512/  
010/020/040 devices write (Program or Erase) with a 3.0-  
3.6V power supply. The SST39VF512/010/020/040  
devices write with a 2.7-3.6V power supply. The devices  
conform to JEDEC standard pinouts for x8 memories.  
significantly improves performance and reliability, while low-  
ering power consumption. They inherently use less energy  
during Erase and Program than alternative flash technolo-  
gies. The total energy consumed is a function of the  
applied voltage, current, and time of application. Since for  
any given voltage range, the SuperFlash technology uses  
less current to program and has a shorter erase time, the  
total energy consumed during any Erase or Program oper-  
ation is less than alternative flash technologies. These  
devices also improve flexibility while lowering the cost for  
program, data, and configuration storage applications.  
Featuring high performance Byte-Program, the  
SST39LF512/010/020/040 and SST39VF512/010/020/  
040 devices provide a maximum Byte-Program time of 20  
µsec. These devices use Toggle Bit or Data# Polling to indi-  
cate the completion of Program operation. To protect  
against inadvertent write, they have on-chip hardware and  
Software Data Protection schemes. Designed, manufac-  
tured, and tested for a wide spectrum of applications, they  
are offered with a guaranteed endurance of 10,000 cycles.  
Data retention is rated at greater than 100 years.  
The SuperFlash technology provides fixed Erase and Pro-  
gram times, independent of the number of Erase/Program  
cycles that have occurred. Therefore the system software  
or hardware does not have to be modified or de-rated as is  
necessary with alternative flash technologies, whose Erase  
and Program times increase with accumulated Erase/Pro-  
gram cycles.  
To meet surface mount requirements, the SST39LF512/  
010/020/040 and SST39VF512/010/020/040 devices are  
offered in 32-lead PLCC and 32-lead TSOP packages. The  
39LF/VF010 is also offered in a 48-ball TFBGA package.  
See Figures 1 and 2 for pinouts.  
The SST39LF512/010/020/040 and SST39VF512/010/  
020/040 devices are suited for applications that require  
convenient and economical updating of program, configu-  
ration, or data memory. For all system applications, they  
©2002 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.  
Multi-Purpose Flash and MPF are trademarks of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71150-03-000 2/02  
1
395  
1234567...24

中文翻译

下载PDF

与SST39VF040-90-4C-NHE相关器件

型号 品牌 获取价格 描述 数据表
SST39VF040-90-4C-NK SST

获取价格

 		512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39VF040-90-4C-U1 MICROCHIP

获取价格

 		512K X 8 FLASH 2.7V PROM, 90 ns, UUC
SST39VF040-90-4C-VL MICROCHIP

获取价格

 		Flash, 512KX8, 90ns
SST39VF040-90-4C-WH SST

获取价格

 		512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39VF040-90-4C-WHE MICROCHIP

获取价格

 		512K X 8 FLASH 2.7V PROM, 90 ns, PDSO32, 8 X 14 MM, MO-142BA, TSOP1-32
SST39VF040-90-4C-WK SST

获取价格

 		512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39VF040-90-4I-B3H SST

获取价格

 		512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39VF040-90-4I-B3K SST

获取价格

 		512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39VF040-90-4I-NH SST

获取价格

 		512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39VF040-90-4I-NHE MICROCHIP

获取价格

 		512K X 8 FLASH 2.7V PROM, 90 ns, PQCC32, PLASTIC, MS-016AE, LCC-32

与SST39VF040-90-4C-NHE相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证