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SST39VF040-70-4I-NHE-T PDF预览

SST39VF040-70-4I-NHE-T

更新时间: 2024-11-23 14:36:03
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
页数 文件大小 规格书
28页 279K
描述
IC,EEPROM,NOR FLASH,512KX8,CMOS,LDCC,32PIN,PLASTIC

SST39VF040-70-4I-NHE-T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:QCCJ, LDCC32,.5X.6
Reach Compliance Code:compliantECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51Factory Lead Time:6 weeks
风险等级:2.07最长访问时间:70 ns
命令用户界面:YES数据轮询:YES
JESD-30 代码:R-PQCC-J32JESD-609代码:e3
长度:13.97 mm内存密度:4194304 bit
内存集成电路类型:FLASH内存宽度:8
湿度敏感等级:3功能数量:1
部门数/规模:128端子数量:32
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512KX8
封装主体材料:PLASTIC/EPOXY封装代码:QCCJ
封装等效代码:LDCC32,.5X.6封装形状:RECTANGULAR
封装形式:CHIP CARRIER并行/串行:PARALLEL
峰值回流温度(摄氏度):245电源:3/3.3 V
认证状态:Not Qualified座面最大高度:3.556 mm
部门规模:4K最大待机电流:0.000015 A
子类别:Flash Memories最大压摆率:0.03 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn) - annealed端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:40切换位:YES
类型:NOR TYPE宽度:11.43 mm
Base Number Matches:1

SST39VF040-70-4I-NHE-T 数据手册

 浏览型号SST39VF040-70-4I-NHE-T的Datasheet PDF文件第2页浏览型号SST39VF040-70-4I-NHE-T的Datasheet PDF文件第3页浏览型号SST39VF040-70-4I-NHE-T的Datasheet PDF文件第4页浏览型号SST39VF040-70-4I-NHE-T的Datasheet PDF文件第5页浏览型号SST39VF040-70-4I-NHE-T的Datasheet PDF文件第6页浏览型号SST39VF040-70-4I-NHE-T的Datasheet PDF文件第7页 
1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash  
SST39LF010 / SST39LF020 / SST39LF040  
SST39VF010 / SST39VF020 / SST39VF040  
Data Sheet  
The SST39LF010, SST39LF020, SST39LF040 and SST39VF010, SST39VF020,  
SST39VF040 are 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash  
(MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash  
technology. The split-gate cell design and thick-oxide tunneling injector attain bet-  
ter reliability and manufacturability compared with alternate approaches. The  
SST39LF010/020/040 devices write (Program or Erase) with a 3.0-3.6V power  
supply. The SST39VF010/020/040 devices write with a 2.7-3.6V power supply.  
The devices conform to JEDEC standard pinouts for x8 memories.  
Features  
• Organized as 128K x8 / 256K x8 / 512K x8  
• Fast Erase and Byte-Program:  
– Sector-Erase Time: 18 ms (typical)  
– Chip-Erase Time: 70 ms (typical)  
– Byte-Program Time: 14 µs (typical)  
– Chip Rewrite Time:  
2 seconds (typical) for SST39LF/VF010  
4 seconds (typical) for SST39LF/VF020  
8 seconds (typical) for SST39LF/VF040  
• Single Voltage Read and Write Operations  
– 3.0-3.6V for SST39LF010/020/040  
– 2.7-3.6V for SST39VF010/020/040  
• Superior Reliability  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
• Automatic Write Timing  
• Low Power Consumption  
(typical values at 14 MHz)  
– Internal VPP Generation  
– Active Current: 5 mA (typical)  
– Standby Current: 1 µA (typical)  
• End-of-Write Detection  
Toggle Bit  
– Data# Polling  
• Sector-Erase Capability  
– Uniform 4 KByte sectors  
• CMOS I/O Compatibility  
• Fast Read Access Time:  
• JEDEC Standard  
– 55 ns for SST39LF010/020/040  
– 70 ns for SST39VF010/020/040  
– Flash EEPROM Pinouts and command sets  
• Packages Available  
• Latched Address and Data  
– 32-lead PLCC  
– 32-lead TSOP (8mm x 14mm)  
• All devices are RoHS compliant  
www.microchip.com  
©2012 Silicon Storage Technology, Inc.  
DS25023B  
06/13  

SST39VF040-70-4I-NHE-T 替代型号

型号 品牌 替代类型 描述 数据表
SST39VF040-70-4I-NHE MICROCHIP

完全替代

512K X 8 FLASH 2.7V PROM, 70 ns, PQCC32, ROHS COMPLIANT, PLASTIC, MO-016AE, LCC-32

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