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SST39VF040-70-4C-NHE PDF预览

SST39VF040-70-4C-NHE

更新时间: 2024-11-23 20:09:19
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器内存集成电路
页数 文件大小 规格书
28页 270K
描述
512K X 8 FLASH 2.7V PROM, 70 ns, PQCC32, ROHS COMPLIANT, PLASTIC, MO-016AE, LCC-32

SST39VF040-70-4C-NHE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:QFJ
包装说明:QCCJ, LDCC32,.5X.6针数:32
Reach Compliance Code:compliantHTS代码:8542.32.00.51
Factory Lead Time:11 weeks风险等级:1.44
Is Samacsys:N最长访问时间:70 ns
命令用户界面:YES数据轮询:YES
JESD-30 代码:R-PQCC-J32JESD-609代码:e3
长度:13.97 mm内存密度:4194304 bit
内存集成电路类型:FLASH内存宽度:8
湿度敏感等级:3功能数量:1
部门数/规模:128端子数量:32
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:512KX8
封装主体材料:PLASTIC/EPOXY封装代码:QCCJ
封装等效代码:LDCC32,.5X.6封装形状:RECTANGULAR
封装形式:CHIP CARRIER并行/串行:PARALLEL
峰值回流温度(摄氏度):245电源:3/3.3 V
编程电压:2.7 V认证状态:Not Qualified
座面最大高度:2.8448 mm部门规模:4K
最大待机电流:0.000015 A子类别:Flash Memories
最大压摆率:0.02 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Matte Tin (Sn) - annealed
端子形式:J BEND端子节距:1.27 mm
端子位置:QUAD处于峰值回流温度下的最长时间:40
切换位:YES类型:NOR TYPE
宽度:11.43 mmBase Number Matches:1

SST39VF040-70-4C-NHE 数据手册

 浏览型号SST39VF040-70-4C-NHE的Datasheet PDF文件第2页浏览型号SST39VF040-70-4C-NHE的Datasheet PDF文件第3页浏览型号SST39VF040-70-4C-NHE的Datasheet PDF文件第4页浏览型号SST39VF040-70-4C-NHE的Datasheet PDF文件第5页浏览型号SST39VF040-70-4C-NHE的Datasheet PDF文件第6页浏览型号SST39VF040-70-4C-NHE的Datasheet PDF文件第7页 
1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash  
SST39LF010 / SST39LF020 / SST39LF040  
SST39VF010 / SST39VF020 / SST39VF040  
Data Sheet  
The SST39LF010, SST39LF020, SST39LF040 and SST39VF010, SST39VF020,  
SST39VF040 are 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash  
(MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash  
technology. The split-gate cell design and thick-oxide tunneling injector attain bet-  
ter reliability and manufacturability compared with alternate approaches. The  
SST39LF010/020/040 devices write (Program or Erase) with a 3.0-3.6V power  
supply. The SST39VF010/020/040 devices write with a 2.7-3.6V power supply.  
The devices conform to JEDEC standard pinouts for x8 memories.  
Features  
• Organized as 128K x8 / 256K x8 / 512K x8  
• Fast Erase and Byte-Program:  
– Sector-Erase Time: 18 ms (typical)  
– Chip-Erase Time: 70 ms (typical)  
– Byte-Program Time: 14 µs (typical)  
– Chip Rewrite Time:  
2 seconds (typical) for SST39LF/VF010  
4 seconds (typical) for SST39LF/VF020  
8 seconds (typical) for SST39LF/VF040  
• Single Voltage Read and Write Operations  
– 3.0-3.6V for SST39LF010/020/040  
– 2.7-3.6V for SST39VF010/020/040  
• Superior Reliability  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
• Automatic Write Timing  
• Low Power Consumption  
(typical values at 14 MHz)  
– Internal VPP Generation  
– Active Current: 5 mA (typical)  
– Standby Current: 1 µA (typical)  
• End-of-Write Detection  
Toggle Bit  
– Data# Polling  
• Sector-Erase Capability  
– Uniform 4 KByte sectors  
• CMOS I/O Compatibility  
• Fast Read Access Time:  
• JEDEC Standard  
– 55 ns for SST39LF010/020/040  
– 70 ns for SST39VF010/020/040  
– Flash EEPROM Pinouts and command sets  
• Packages Available  
• Latched Address and Data  
– 32-lead PLCC  
– 32-lead TSOP (8mm x 14mm)  
• All devices are RoHS compliant  
www.microchip.com  
©2012 Silicon Storage Technology, Inc.  
DS25023B  
06/13  

SST39VF040-70-4C-NHE 替代型号

型号 品牌 替代类型 描述 数据表
SST39VF040-70-4I-NHE MICROCHIP

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