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SST29EE010-70-4C-EHE PDF预览

SST29EE010-70-4C-EHE

更新时间： 2024-09-19 20:19:39
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
28页 573K
描述
128K X 8 FLASH 5V PROM, 70 ns, PDSO32, 8 X 20 MM, ROHS COMPLIANT, MO-142BD, TSOP1-32

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SST29EE010-70-4C-EHE 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：TSOP1
包装说明：TSSOP,针数：32
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.32.00.51风险等级：5.47
最长访问时间：70 nsJESD-30 代码：R-PDSO-G32
JESD-609代码：e3长度：18.4 mm
内存密度：1048576 bit内存集成电路类型：FLASH
内存宽度：8功能数量：1
端子数量：32字数：131072 words
字数代码：128000工作模式：ASYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：128KX8封装主体材料：PLASTIC/EPOXY
封装代码：TSSOP封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行：PARALLEL
峰值回流温度（摄氏度）：260编程电压：5 V
认证状态：Not Qualified座面最大高度：1.2 mm
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：MATTE TIN端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
处于峰值回流温度下的最长时间：40类型：NOR TYPE
宽度：8 mm最长写入周期时间 (tWC)：10 ms
Base Number Matches：1

SST29EE010-70-4C-EHE 数据手册

 浏览型号SST29EE010-70-4C-EHE的Datasheet PDF文件第2页浏览型号SST29EE010-70-4C-EHE的Datasheet PDF文件第3页浏览型号SST29EE010-70-4C-EHE的Datasheet PDF文件第4页浏览型号SST29EE010-70-4C-EHE的Datasheet PDF文件第5页浏览型号SST29EE010-70-4C-EHE的Datasheet PDF文件第6页浏览型号SST29EE010-70-4C-EHE的Datasheet PDF文件第7页 
1 Mbit (128K x8) Page-Write EEPROM  
SST29EE010  
SST29EE / VE0101Mb (x8) Page-Write, Small-Sector flash memories  
Data Sheet  
FEATURES:  
•
Single Voltage Read and Write Operations  
– 4.5-5.5V for SST29EE010  
– Internal VPP Generation  
End of Write Detection  
•
•
Superior Reliability  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
Low Power Consumption  
– Active Current: 20 mA (typical) for 5V and  
10 mA (typical) for 2.7V  
– Toggle Bit  
– Data# Polling  
Hardware and Software Data Protection  
Product Identification can be accessed via  
Software Operation  
TTL I/O Compatibility  
JEDEC Standard  
– Flash EEPROM Pinouts and command sets  
Packages Available  
– 32-lead PLCC  
•
•
•
•
•
•
– Standby Current: 10 µA (typical)  
Fast Page-Write Operation  
– 128 Bytes per Page, 1024 Pages  
– Page-Write Cycle: 5 ms (typical)  
– Complete Memory Rewrite: 5 sec (typical)  
– Effective Byte-Write Cycle Time: 39 µs (typical)  
Fast Read Access Time  
– 4.5-5.5V operation: 70 and 90 ns  
– 2.7-3.6V operation: 150 and 200 ns  
•
– 32-lead TSOP (8mm x 14mm, 8mm x 20mm)  
– 32-pin PDIP  
All non-Pb (lead-free) devices are RoHS compliant  
•
•
•
•
Latched Address and Data  
Automatic Write Timing  
PRODUCT DESCRIPTION  
The SST29EE010 is a 128K x8 CMOS Page-Write  
EEPROMs manufactured with SST’s proprietary, high-per-  
formance CMOS SuperFlash technology. The split-gate  
cell design and thick-oxide tunneling injector attain better  
reliability and manufacturability compared with alternate  
approaches. The SST29EE010 write with a single power  
supply. Internal Erase/Program is transparent to the user.  
The SST29EE010 conform to JEDEC standard pinouts for  
byte-wide memories.  
applications, the SST29EE010 significantly improves  
performance and reliability, while lowering power con-  
sumption. The SST29EE010 improves flexibility while  
lowering the cost for program, data, and configuration  
storage applications.  
To meet high density, surface mount requirements, the  
SST29EE010 is offered in 32-lead PLCC and 32-lead  
TSOP packages. A 600-mil, 32-pin PDIP package is also  
available. See Figures 2, 3, and 4 for pin assignments.  
Featuring high performance Page-Write, the SST29EE010  
provides a typical Byte-Write time of 39 µsec. The entire  
memory, i.e., 128 Kbyte, can be written page-by-page in as  
little as 5 seconds, when using interface features such as  
Toggle Bit or Data# Polling to indicate the completion of a  
Write cycle. To protect against inadvertent write, the  
SST29EE010 has on-chip hardware and Software Data  
Protection schemes. Designed, manufactured, and tested  
for a wide spectrum of applications, the SST29EE010 is  
offered with a guaranteed Page-Write endurance of 10,000  
cycles. Data retention is rated at greater than 100 years.  
Device Operation  
The SST Page-Write EEPROM offers in-circuit electrical  
write capability. The SST29EE010 does not require sepa-  
rate Erase and Program operations. The internally timed  
Write cycle executes both erase and program transparently  
to the user. The SST29EE010 has industry standard  
optional Software Data Protection, which SST recom-  
mends always to be enabled. The SST29EE010 is com-  
patible with industry standard EEPROM pinouts and  
functionality.  
The SST29EE010 is suited for applications that  
require convenient and economical updating of pro-  
gram, configuration, or data memory. For all system  
©2009 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.  
SSF is a trademark of Silicon Storage Technology, Inc.  
S71061-13-000  
1
3/09  
These specifications are subject to change without notice.  
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SST29EE010-70-4C-EHE 替代型号

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SST29EE010-70-4C-NH SST

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 		1 Mbit (128K x8) Page-Mode EEPROM
SST29EE010-70-4C-NHE SST

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 		1 Mbit (128K x8) Page-Write EEPROM
SST29EE010-70-4C-NHE MICROCHIP

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 		128K X 8 FLASH 5V PROM, 70 ns, PQCC32, ROHS COMPLIANT, PLASTIC, MS-016AE, LCC-32
SST29EE010-70-4C-PH SST

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 		1 Mbit (128K x8) Page-Mode EEPROM
SST29EE010-70-4C-PHE SST

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 		1 Mbit (128K x8) Page-Write EEPROM
SST29EE010-70-4C-PHE MICROCHIP

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 		128K X 8 FLASH 5V PROM, 70 ns, PDIP32, 0.600 INCH, ROHS COMPLIANT, PLASTIC, MO-015AP, DIP-
SST29EE010-70-4C-UH SST

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 		1 Mbit (128K x8) Page-Mode EEPROM
SST29EE010-70-4C-WH SST

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 		1 Mbit (128K x8) Page-Mode EEPROM
SST29EE010-70-4C-WHE SST

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 		1 Mbit (128K x8) Page-Write EEPROM
SST29EE010-70-4C-WHE MICROCHIP

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 		128K X 8 FLASH 5V PROM, 70 ns, PDSO32, 8 X 14 MM, ROHS COMPLIANT, MO-142BA, TSOP1-32

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