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SST29EE010-70-4I-WH

更新时间： 2024-11-01 22:42:43
品牌 Logo 应用领域
SST 内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
26页 325K
描述
1 Mbit (128K x8) Page-Mode EEPROM

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1 Mbit (128K x8) Page-Mode EEPROM  
SST29EE010 / SST29LE010 / SST29VE010  
SST29EE010 / SST29LE010 / SST29VE0101Mb Page-Mode flash memories  
Data Sheet  
FEATURES:  
•
Single Voltage Read and Write Operations  
•
•
Latched Address and Data  
– 5.0V-only for SST29EE010  
– 3.0-3.6V for SST29LE010  
– 2.7-3.6V for SST29VE010  
Automatic Write Timing  
– Internal VPP Generation  
End of Write Detection  
•
•
•
Superior Reliability  
– Toggle Bit  
– Data# Polling  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
•
•
Hardware and Software Data Protection  
Low Power Consumption  
Product Identification can be accessed via  
Software Operation  
– Active Current: 20 mA (typical) for 5V and 10 mA  
(typical) for 3.0/2.7V  
– Standby Current: 10 µA (typical)  
•
•
TTL I/O Compatibility  
JEDEC Standard  
•
•
Fast Page-Write Operation  
– Flash EEPROM Pinouts and command sets  
Packages Available  
– 128 Bytes per Page, 1024 Pages  
– Page-Write Cycle: 5 ms (typical)  
– Complete Memory Rewrite: 5 sec (typical)  
– Effective Byte-Write Cycle Time: 39 µs (typical)  
•
– 32-lead PLCC  
– 32-lead TSOP (8mm x 14mm, 8mm x 20mm)  
– 32-pin PDIP  
Fast Read Access Time  
– 5.0V-only operation: 70 and 90 ns  
– 3.0-3.6V operation: 150 and 200 ns  
– 2.7-3.6V operation: 200 and 250 ns  
PRODUCT DESCRIPTION  
The SST29EE/LE/VE010 are 128K x8 CMOS Page-Write  
EEPROMs manufactured with SST’s proprietary, high per-  
formance CMOS SuperFlash technology. The split-gate  
cell design and thick oxide tunneling injector attain better  
reliability and manufacturability compared with alternate  
approaches. The SST29EE/LE/VE010 write with a single  
power supply. Internal Erase/Program is transparent to the  
user. The SST29EE/LE/VE010 conform to JEDEC stan-  
dard pinouts for byte-wide memories.  
The SST29EE/LE/VE010 are suited for applications that  
require convenient and economical updating of program,  
configuration, or data memory. For all system applications,  
the SST29EE/LE/VE010 significantly improve performance  
and reliability, while lowering power consumption. The  
SST29EE/LE/VE010 improve flexibility while lowering the  
cost for program, data, and configuration storage applica-  
tions.  
To meet high density, surface mount requirements, the  
SST29EE/LE/VE010 are offered in 32-lead PLCC and 32-  
lead TSOP packages. A 600-mil, 32-pin PDIP package is  
also available. See Figures 1, 2, and 3 for pinouts.  
Featuring high performance Page-Write, the SST29EE/LE/  
VE010 provide a typical Byte-Write time of 39 µsec. The  
entire memory, i.e., 128 KBytes, can be written page-by-  
page in as little as 5 seconds, when using interface features  
such as Toggle Bit or Data# Polling to indicate the comple-  
tion of a Write cycle. To protect against inadvertent write,  
the SST29EE/LE/VE010 have on-chip hardware and Soft-  
ware Data Protection schemes. Designed, manufactured,  
and tested for a wide spectrum of applications, the  
SST29EE/LE/VE010 are offered with a guaranteed Page-  
Write endurance of 10,000 cycles. Data retention is rated at  
greater than 100 years.  
Device Operation  
The SST Page-Mode EEPROM offers in-circuit electrical  
write capability. The SST29EE/LE/VE010 does not require  
separate Erase and Program operations. The internally  
timed write cycle executes both erase and program trans-  
parently to the user. The SST29EE/LE/VE010 have indus-  
try standard optional Software Data Protection, which SST  
recommends always to be enabled. The SST29EE/LE/  
VE010 are compatible with industry standard EEPROM  
pinouts and functionality.  
©2001 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.  
SSF is a trademark of Silicon Storage Technology, Inc.  
S71061-07-000 6/01  
1
304  
These specifications are subject to change without notice.  
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