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SST29EE010-90-4C-EHE

更新时间： 2024-11-26 05:33:47
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SST 内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
30页 458K
描述
1 Mbit (128K x8) Page-Write EEPROM

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SST29EE010-90-4C-EHE 数据手册

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1 Mbit (128K x8) Page-Write EEPROM  
SST29EE010 / SST29VE010  
SST29EE / VE0101Mb (x8) Page-Write, Small-Sector flash memories  
Data Sheet  
FEATURES:  
•
•
•
Single Voltage Read and Write Operations  
•
•
Automatic Write Timing  
– 4.5-5.5V for SST29EE010  
– 2.7-3.6V for SST29VE010  
– Internal VPP Generation  
End of Write Detection  
Superior Reliability  
– Toggle Bit  
– Data# Polling  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
•
•
Hardware and Software Data Protection  
Low Power Consumption  
Product Identification can be accessed via  
Software Operation  
– Active Current: 20 mA (typical) for 5V and  
10 mA (typical) for 2.7V  
– Standby Current: 10 µA (typical)  
•
•
TTL I/O Compatibility  
JEDEC Standard  
•
Fast Page-Write Operation  
– Flash EEPROM Pinouts and command sets  
Packages Available  
– 128 Bytes per Page, 1024 Pages  
– Page-Write Cycle: 5 ms (typical)  
– Complete Memory Rewrite: 5 sec (typical)  
– Effective Byte-Write Cycle Time: 39 µs (typical)  
•
– 32-lead PLCC  
– 32-lead TSOP (8mm x 14mm, 8mm x 20mm)  
– 32-pin PDIP  
•
•
Fast Read Access Time  
•
All non-Pb (lead-free) devices are RoHS compliant  
– 4.5-5.5V operation: 70 and 90 ns  
– 2.7-3.6V operation: 150 and 200 ns  
Latched Address and Data  
PRODUCT DESCRIPTION  
The SST29EE/VE010 are 128K x8 CMOS Page-Write  
EEPROMs manufactured with SST’s proprietary, high-per-  
formance CMOS SuperFlash technology. The split-gate  
cell design and thick-oxide tunneling injector attain better  
reliability and manufacturability compared with alternate  
approaches. The SST29EE/VE010 write with a single  
power supply. Internal Erase/Program is transparent to the  
user. The SST29EE/VE010 conform to JEDEC standard  
pinouts for byte-wide memories.  
The SST29EE/VE010 are suited for applications that  
require convenient and economical updating of pro-  
gram, configuration, or data memory. For all system  
applications, the SST29EE/VE010 significantly  
improve performance and reliability, while lowering  
power consumption. The SST29EE/VE010 improve  
flexibility while lowering the cost for program, data, and  
configuration storage applications.  
To meet high density, surface mount requirements, the  
SST29EE/VE010 are offered in 32-lead PLCC and 32-lead  
TSOP packages. A 600-mil, 32-pin PDIP package is also  
available. See Figures 1, 2, and 3 for pin assignments.  
Featuring high performance Page-Write, the SST29EE/  
VE010 provide a typical Byte-Write time of 39 µsec. The  
entire memory, i.e., 128 Kbyte, can be written page-by-  
page in as little as 5 seconds, when using interface features  
such as Toggle Bit or Data# Polling to indicate the comple-  
tion of a Write cycle. To protect against inadvertent write,  
the SST29EE/VE010 have on-chip hardware and Software  
Data Protection schemes. Designed, manufactured, and  
tested for a wide spectrum of applications, the SST29EE/  
VE010 are offered with a guaranteed Page-Write endur-  
ance of 10,000 cycles. Data retention is rated at greater  
than 100 years.  
Device Operation  
The SST Page-Write EEPROM offers in-circuit electrical  
write capability. The SST29EE/VE010 does not require  
separate Erase and Program operations. The internally  
timed Write cycle executes both erase and program trans-  
parently to the user. The SST29EE/VE010 have industry  
standard optional Software Data Protection, which SST  
recommends always to be enabled. The SST29EE/VE010  
are compatible with industry standard EEPROM pinouts  
and functionality.  
©2005 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.  
SSF is a trademark of Silicon Storage Technology, Inc.  
S71061-11-000  
1
9/05  
These specifications are subject to change without notice.  
1234567...30

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SST29EE010-90-4C-N SST

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SST29EE010-90-4C-NH SST

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SST29EE010-90-4C-NHE SST

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SST29EE010-90-4C-NHE MICROCHIP

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SST29EE010-90-4C-P SST

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 		1 Megabit (128K x 8) Page Mode EEPROM
SST29EE010-90-4C-PH SST

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 		1 Mbit (128K x8) Page-Mode EEPROM
SST29EE010-90-4C-U SST

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 		1 Megabit (128K x 8) Page Mode EEPROM
SST29EE010-90-4C-U2 SILICON

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 		EEPROM, 128KX8, 90ns, Parallel, CMOS, DIE
SST29EE010-90-4C-UH SST

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 		1 Mbit (128K x8) Page-Mode EEPROM
SST29EE010-90-4C-W SST

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 		1 Megabit (128K x 8) Page Mode EEPROM

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