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SST29EE010-70-4C-WH

更新时间： 2024-11-22 22:42:43
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SST 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
26页 325K
描述
1 Mbit (128K x8) Page-Mode EEPROM

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 浏览型号SST29EE010-70-4C-WH的Datasheet PDF文件第2页浏览型号SST29EE010-70-4C-WH的Datasheet PDF文件第3页浏览型号SST29EE010-70-4C-WH的Datasheet PDF文件第4页浏览型号SST29EE010-70-4C-WH的Datasheet PDF文件第5页浏览型号SST29EE010-70-4C-WH的Datasheet PDF文件第6页浏览型号SST29EE010-70-4C-WH的Datasheet PDF文件第7页 
1 Mbit (128K x8) Page-Mode EEPROM  
SST29EE010 / SST29LE010 / SST29VE010  
SST29EE010 / SST29LE010 / SST29VE0101Mb Page-Mode flash memories  
Data Sheet  
FEATURES:  
•
Single Voltage Read and Write Operations  
•
•
Latched Address and Data  
– 5.0V-only for SST29EE010  
– 3.0-3.6V for SST29LE010  
– 2.7-3.6V for SST29VE010  
Automatic Write Timing  
– Internal VPP Generation  
End of Write Detection  
•
•
•
Superior Reliability  
– Toggle Bit  
– Data# Polling  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
•
•
Hardware and Software Data Protection  
Low Power Consumption  
Product Identification can be accessed via  
Software Operation  
– Active Current: 20 mA (typical) for 5V and 10 mA  
(typical) for 3.0/2.7V  
– Standby Current: 10 µA (typical)  
•
•
TTL I/O Compatibility  
JEDEC Standard  
•
•
Fast Page-Write Operation  
– Flash EEPROM Pinouts and command sets  
Packages Available  
– 128 Bytes per Page, 1024 Pages  
– Page-Write Cycle: 5 ms (typical)  
– Complete Memory Rewrite: 5 sec (typical)  
– Effective Byte-Write Cycle Time: 39 µs (typical)  
•
– 32-lead PLCC  
– 32-lead TSOP (8mm x 14mm, 8mm x 20mm)  
– 32-pin PDIP  
Fast Read Access Time  
– 5.0V-only operation: 70 and 90 ns  
– 3.0-3.6V operation: 150 and 200 ns  
– 2.7-3.6V operation: 200 and 250 ns  
PRODUCT DESCRIPTION  
The SST29EE/LE/VE010 are 128K x8 CMOS Page-Write  
EEPROMs manufactured with SST’s proprietary, high per-  
formance CMOS SuperFlash technology. The split-gate  
cell design and thick oxide tunneling injector attain better  
reliability and manufacturability compared with alternate  
approaches. The SST29EE/LE/VE010 write with a single  
power supply. Internal Erase/Program is transparent to the  
user. The SST29EE/LE/VE010 conform to JEDEC stan-  
dard pinouts for byte-wide memories.  
The SST29EE/LE/VE010 are suited for applications that  
require convenient and economical updating of program,  
configuration, or data memory. For all system applications,  
the SST29EE/LE/VE010 significantly improve performance  
and reliability, while lowering power consumption. The  
SST29EE/LE/VE010 improve flexibility while lowering the  
cost for program, data, and configuration storage applica-  
tions.  
To meet high density, surface mount requirements, the  
SST29EE/LE/VE010 are offered in 32-lead PLCC and 32-  
lead TSOP packages. A 600-mil, 32-pin PDIP package is  
also available. See Figures 1, 2, and 3 for pinouts.  
Featuring high performance Page-Write, the SST29EE/LE/  
VE010 provide a typical Byte-Write time of 39 µsec. The  
entire memory, i.e., 128 KBytes, can be written page-by-  
page in as little as 5 seconds, when using interface features  
such as Toggle Bit or Data# Polling to indicate the comple-  
tion of a Write cycle. To protect against inadvertent write,  
the SST29EE/LE/VE010 have on-chip hardware and Soft-  
ware Data Protection schemes. Designed, manufactured,  
and tested for a wide spectrum of applications, the  
SST29EE/LE/VE010 are offered with a guaranteed Page-  
Write endurance of 10,000 cycles. Data retention is rated at  
greater than 100 years.  
Device Operation  
The SST Page-Mode EEPROM offers in-circuit electrical  
write capability. The SST29EE/LE/VE010 does not require  
separate Erase and Program operations. The internally  
timed write cycle executes both erase and program trans-  
parently to the user. The SST29EE/LE/VE010 have indus-  
try standard optional Software Data Protection, which SST  
recommends always to be enabled. The SST29EE/LE/  
VE010 are compatible with industry standard EEPROM  
pinouts and functionality.  
©2001 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.  
SSF is a trademark of Silicon Storage Technology, Inc.  
S71061-07-000 6/01  
1
304  
These specifications are subject to change without notice.  
1234567...26

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