Datasheet > SST27SF512-70-3C-NHE

SST27SF512-70-3C-NHE

更新时间： 2024-11-22 04:30:43

品牌	Logo	应用领域
SST		内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
23页	327K
描述
512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash

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512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash

SST27SF512 / SST27SF010 / SST27SF020

SST27SF512 / 010 / 0205.0V-Read 512Kb / 1Mb / 2Mb (x8) MTP flash memories

Data Sheet

FEATURES:

•

Organized as 64K x8 / 128K x8 / 256K x8

4.5-5.5V Read Operation

•

Fast Byte-Program Operation

– Byte-Program Time: 20 µs (typical)

– Chip Program Time:

Superior Reliability

1.4 seconds (typical) for SST27SF512

2.8 seconds (typical) for SST27SF010

5.6 seconds (typical) for SST27SF020

– Endurance: At least 1000 Cycles

– Greater than 100 years Data Retention

•

Low Power Consumption

•

Electrical Erase Using Programmer

– Active Current: 20 mA (typical)

– Standby Current: 10 µA (typical)

– Does not require UV source

– Chip-Erase Time: 100 ms (typical)

Fast Read Access Time

•

TTL I/O Compatibility

– 70 ns

JEDEC Standard Byte-wide EPROM Pinouts

Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

– 28-pin PDIP for SST27SF512

– 32-pin PDIP for SST27SF010/020

•

All non-Pb (lead-free) devices are RoHS compliant

PRODUCT DESCRIPTION

The SST27SF512/010/020 are a 64K x8 / 128K x8 / 256K

x8 CMOS, Many-Time Programmable (MTP) low cost

flash, manufactured with SST’s proprietary, high perfor-

mance SuperFlash technology. The split-gate cell design

and thick oxide tunneling injector attain better reliability and

manufacturability compared with alternate approaches.

These MTP devices can be electrically erased and pro-

grammed at least 1000 times using an external program-

mer with a 12V power supply. They have to be erased prior

to programming. These devices conform to JEDEC stan-

dard pinouts for byte-wide memories.

Device Operation

The SST27SF512/010/020 are a low cost flash solution

that can be used to replace existing UV-EPROM, OTP,

and mask ROM sockets. These devices are functionally

(read and program) and pin compatible with industry

standard EPROM products. In addition to EPROM func-

tionality, these devices also support electrical Erase

operation via an external programmer. They do not

require a UV source to erase, and therefore the pack-

ages do not have a window.

Featuring

high-performance

Byte-Program,

the

Read

SST27SF512/010/020 provide a Byte-Program time of 20

µs. Designed, manufactured, and tested for a wide spec-

trum of applications, these devices are offered with an

endurance of at least 1000 cycles. Data retention is rated at

greater than 100 years.

The Read operation of the SST27SF512/010/020 is con-

trolled by CE# and OE#. Both CE# and OE# have to be low

for the system to obtain data from the outputs. Once the

address is stable, the address access time is equal to the

delay from CE# to output (T_CE). Data is available at the out-

put after a delay of T_OEfrom the falling edge of OE#,

assuming that CE# pin has been low and the addresses

have been stable for at least T_CE-T_OE.When the CE# pin is

high, the chip is deselected and a typical standby current of

10 µA is consumed. OE# is the output control and is used

to gate data from the output pins. The data bus is in high

impedance state when either CE# or OE# is high.

The SST27SF512/010/020 are suited for applications that

require infrequent writes and low power nonvolatile stor-

age. These devices will improve flexibility, efficiency, and

performance while matching the low cost in nonvolatile

applications that currently use UV-EPROMs, OTPs, and

mask ROMs.

To meet surface mount and conventional through hole

requirements, the SST27SF512 are offered in 32-lead

PLCC, 32-lead TSOP, and 28-pin PDIP packages. The

SST27SF010/020 are offered in 32-pin PDIP, 32-lead

PLCC, and 32-lead TSOP packages. See Figures 1, 2, and

3 for pin assignments.

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

MTP is a trademark of Silicon Storage Technology, Inc.

S71152-11-000

9/05

These specifications are subject to change without notice.

12 3 4 5 6 7...23

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与SST27SF512-70-3C-NHE相关器件

型号	品牌	获取价格	描述	数据表
SST27SF512-70-3C-PG	SST	获取价格	256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
SST27SF512-70-3C-PGE	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
SST27SF512-70-3C-PH	SST	获取价格	256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
SST27SF512-70-3C-WG	SST	获取价格	256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
SST27SF512-70-3C-WH	SST	获取价格	256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
SST27SF512-70-3C-WHE	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
SST27SF512-70-3I-WH	SILICON	获取价格	EEPROM, 64KX8, 70ns, Parallel, CMOS, PDSO32
SST27SF512-90	SST	获取价格	256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
SST27SF512-90-3C-NG	SST	获取价格	256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
SST27SF512-90-3C-NH	SST	获取价格	256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash

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