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SST25VF016B-50-4C-QAF

更新时间： 2024-11-19 21:13:31
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器时钟内存集成电路
页数 文件大小 规格书
30页 1100K
描述
16M X 1 FLASH 2.7V PROM, DSO8, 6 X 5 MM, ROHS COMPLIANT, WSON-8

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中文翻译

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SST25VF016B-50-4C-QAF 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SON
包装说明：HVSON, SOLCC8,.25针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.32.00.51Factory Lead Time：12 weeks
风险等级：1.4最大时钟频率 (fCLK)：50 MHz
数据保留时间-最小值：100耐久性：100000 Write/Erase Cycles
JESD-30 代码：R-XDSO-N8JESD-609代码：e4
长度：6 mm内存密度：16777216 bit
内存集成电路类型：FLASH内存宽度：1
功能数量：1端子数量：8
字数：16777216 words字数代码：16000000
工作模式：SYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：16MX1
封装主体材料：UNSPECIFIED封装代码：HVSON
封装等效代码：SOLCC8,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE并行/串行：SERIAL
峰值回流温度（摄氏度）：NOT SPECIFIED电源：3/3.3 V
编程电压：2.7 V认证状态：Not Qualified
座面最大高度：0.8 mm串行总线类型：SPI
最大待机电流：0.00002 A子类别：Flash Memories
最大压摆率：0.03 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子面层：NICKEL PALLADIUM GOLD
端子形式：NO LEAD端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
类型：NOR TYPE宽度：5 mm
写保护：HARDWARE/SOFTWAREBase Number Matches：1

SST25VF016B-50-4C-QAF 数据手册

 浏览型号SST25VF016B-50-4C-QAF的Datasheet PDF文件第2页浏览型号SST25VF016B-50-4C-QAF的Datasheet PDF文件第3页浏览型号SST25VF016B-50-4C-QAF的Datasheet PDF文件第4页浏览型号SST25VF016B-50-4C-QAF的Datasheet PDF文件第5页浏览型号SST25VF016B-50-4C-QAF的Datasheet PDF文件第6页浏览型号SST25VF016B-50-4C-QAF的Datasheet PDF文件第7页 
SST25VF016B  
16 Mbit SPI Serial Flash  
Features  
Product Description  
• Single Voltage Read and Write Operations  
- 2.7-3.6V  
The 25 series Serial Flash family features a four-wire,  
SPI-compatible interface that allows for a low pin-count  
package which occupies less board space and ulti-  
mately lowers total system costs. The SST25VF016B  
devices are enhanced with improved operating fre-  
quency and even lower power consumption than the  
original SST25VFxxxA devices. SST25VF016B SPI  
serial flash memories are manufactured with propri-  
etary, high-performance CMOS SuperFlash technol-  
ogy. The split-gate cell design and thick-oxide tunneling  
injector attain better reliability and manufacturability  
compared with alternate approaches.  
• Serial Interface Architecture  
- SPI Compatible: Mode 0 and Mode 3  
• High Speed Clock Frequency  
- Up to 50 MHz  
• Superior Reliability  
- Endurance: 100,000 Cycles (typical)  
- Greater than 100 years Data Retention  
• Low Power Consumption:  
- Active Read Current: 10 mA (typical)  
- Standby Current: 5 µA (typical)  
SST25VF016B devices significantly improve perfor-  
mance and reliability, while lowering power consump-  
tion. The devices write (Program or Erase) with a single  
power supply of 2.7-3.6V for SST25VF016B. The total  
energy consumed is a function of the applied voltage,  
current, and time of application. Since for any given  
voltage range, the SuperFlash technology uses less  
current to program and has a shorter erase time, the  
total energy consumed during any Erase or Program  
operation is less than alternative flash memory technol-  
ogies.  
• Flexible Erase Capability  
- Uniform 4 KByte sectors  
- Uniform 32 KByte overlay blocks  
- Uniform 64 KByte overlay blocks  
• Fast Erase and Byte-Program:  
- Chip-Erase Time: 35 ms (typical)  
- Sector-/Block-Erase Time: 18 ms (typical)  
- Byte-Program Time: 7 µs (typical)  
• Auto Address Increment (AAI) Programming  
The SST25VF016B device is offered in both 8-lead  
SOIC (200 mils) and 8-contact WSON (6mm x 5mm)  
packages. See Figure 2-1 for pin assignments.  
- Decrease total chip programming time over  
Byte-Program operations  
• End-of-Write Detection  
- Software polling the BUSY bit in Status Register  
- Busy Status readout on SO pin in AAI Mode  
• Hold Pin (HOLD#)  
- Suspends a serial sequence to the memory  
without deselecting the device  
• Write Protection (WP#)  
- Enables/Disables the Lock-Down function of the  
status register  
• Software Write Protection  
- Write protection through Block-Protection bits in  
status register  
• Temperature Range  
- Commercial: 0°C to +70°C  
- Industrial: -40°C to +85°C  
• Packages Available  
- 8-lead SOIC (200 mils)  
- 8-contact WSON (6mm x 5mm)  
• All devices are RoHS compliant  
2015 Microchip Technology Inc.  
DS20005044C-page 1  
1234567...30

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SST25VF016B-50-4C-QAF 替代型号

型号 品牌 替代类型 描述 数据表
SST25VF016B-50-4C-QAF-T MICROCHIP

完全替代

 IC,SERIAL EEPROM,NOR FLASH,2MX8,CMOS,LLCC,8PIN,PLASTIC
SST25VF016B-50-4C-S2AF MICROCHIP

完全替代

 16M X 1 FLASH 2.7V PROM, PDSO8, 5.20 X 8 MM, ROHS COMPLIANT, EIAJ, SOIC-8
SST25VF016B-50-4I-QAF MICROCHIP

类似代替

 16M X 1 FLASH 2.7V PROM, DSO8, 6 X 5 MM, ROHS COMPLIANT, WSON-8

与SST25VF016B-50-4C-QAF相关器件

型号 品牌 获取价格 描述 数据表
SST25VF016B-50-4C-QAF-T MICROCHIP

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 		IC,SERIAL EEPROM,NOR FLASH,2MX8,CMOS,LLCC,8PIN,PLASTIC
SST25VF016B-50-4C-S2AF MICROCHIP

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 		16M X 1 FLASH 2.7V PROM, PDSO8, 5.20 X 8 MM, ROHS COMPLIANT, EIAJ, SOIC-8
SST25VF016B-50-4C-S2AF SST

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 		16 Mbit SPI Serial Flash
SST25VF016B-50-4C-S2AF-T MICROCHIP

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 		16 Mbit SPI Serial Flash
SST25VF016B-50-4I-QAE MICROCHIP

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 		16 Mbit SPI Serial Flash
SST25VF016B-50-4I-QAE-T MICROCHIP

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 		16 Mbit SPI Serial Flash
SST25VF016B-50-4I-QAF SST

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 		16 Mbit SPI Serial Flash
SST25VF016B-50-4I-QAF MICROCHIP

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 		16M X 1 FLASH 2.7V PROM, DSO8, 6 X 5 MM, ROHS COMPLIANT, WSON-8
SST25VF016B-50-4I-QAF-T MICROCHIP

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 		IC,SERIAL EEPROM,NOR FLASH,2MX8,CMOS,LLCC,8PIN,PLASTIC
SST25VF016B-50-4I-S2AE MICROCHIP

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 		FLASH 2.7V PROM

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