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SST25VF016B-50-4I-QAE PDF预览

SST25VF016B-50-4I-QAE

更新时间: 2024-11-20 01:10:07
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美国微芯 - MICROCHIP /
页数 文件大小 规格书
30页 394K
描述
16 Mbit SPI Serial Flash

SST25VF016B-50-4I-QAE 数据手册

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SST25VF016B  
16 Mbit SPI Serial Flash  
Features  
Product Description  
• Single Voltage Read and Write Operations  
- 2.7-3.6V  
The 25 series Serial Flash family features a four-wire,  
SPI-compatible interface that allows for a low pin-count  
package which occupies less board space and ulti-  
mately lowers total system costs. The SST25VF016B  
devices are enhanced with improved operating fre-  
quency and even lower power consumption than the  
original SST25VFxxxA devices. SST25VF016B SPI  
serial flash memories are manufactured with propri-  
etary, high-performance CMOS SuperFlash technol-  
ogy. The split-gate cell design and thick-oxide tunneling  
injector attain better reliability and manufacturability  
compared with alternate approaches.  
• Serial Interface Architecture  
- SPI Compatible: Mode 0 and Mode 3  
• High Speed Clock Frequency  
- Up to 50 MHz  
• Superior Reliability  
- Endurance: 100,000 Cycles (typical)  
- Greater than 100 years Data Retention  
• Low Power Consumption:  
- Active Read Current: 10 mA (typical)  
- Standby Current: 5 µA (typical)  
SST25VF016B devices significantly improve perfor-  
mance and reliability, while lowering power consump-  
tion. The devices write (Program or Erase) with a single  
power supply of 2.7-3.6V for SST25VF016B. The total  
energy consumed is a function of the applied voltage,  
current, and time of application. Since for any given  
voltage range, the SuperFlash technology uses less  
current to program and has a shorter erase time, the  
total energy consumed during any Erase or Program  
operation is less than alternative flash memory technol-  
ogies.  
• Flexible Erase Capability  
- Uniform 4 KByte sectors  
- Uniform 32 KByte overlay blocks  
- Uniform 64 KByte overlay blocks  
• Fast Erase and Byte-Program:  
- Chip-Erase Time: 35 ms (typical)  
- Sector-/Block-Erase Time: 18 ms (typical)  
- Byte-Program Time: 7 µs (typical)  
• Auto Address Increment (AAI) Programming  
The SST25VF016B device is offered in both 8-lead  
SOIC (200 mils) and 8-contact WSON (6mm x 5mm)  
packages. See Figure 2-1 for pin assignments.  
- Decrease total chip programming time over  
Byte-Program operations  
• End-of-Write Detection  
- Software polling the BUSY bit in Status Register  
- Busy Status readout on SO pin in AAI Mode  
• Hold Pin (HOLD#)  
- Suspends a serial sequence to the memory  
without deselecting the device  
• Write Protection (WP#)  
- Enables/Disables the Lock-Down function of the  
status register  
• Software Write Protection  
- Write protection through Block-Protection bits in  
status register  
Temperature Range  
- Commercial: 0°C to +70°C  
- Industrial: -40°C to +85°C  
• Packages Available  
- 8-lead SOIC (200 mils)  
- 8-contact WSON (6mm x 5mm)  
• All devices are RoHS compliant  
2015 Microchip Technology Inc.  
DS20005044C-page 1  

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